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SI7439DP-T1-E3

P1-P3P4-P6P7-P9P10-P12
Si7439DP
www.vishay.com
Vishay Siliconix
S18-0353-Rev. F, 26-Mar-18
1
Document Number: 73106
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 150 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFETs
• Ultra low on-resistance critical for application
• Low thermal resistance PowerPAK
®
package
with low 1.07 mm profile
• 100 % R
g
and avalanche tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Active clamp in intermediate
DC/DC power supplies
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerP
AK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
V
DS
(V) -150
R
DS(on)
max. () at V
GS
= -10 V 0.090
R
DS(on)
max. () at V
GS
= -6 V 0.095
Q
g
typ. (nC) 88,
I
D
(A) -5.2
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
Available
S
G
D
P-Channel MOSFE
T
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free Si7439DP-T1-E3
Lead (Pb)-free and halogen-free Si7439DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s
STEADY
STATE
UNIT
Drain-source voltage V
DS
-150
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
-5.2 -3
A
T
A
= 70 °C -4.1 -2.4
Pulsed drain current I
DM
-50
Continuous source current (diode conduction)
a
I
S
-4.2 -1.6
Single pulse avalanche current
L = 0.1 mH
I
AS
-40
Single pulse avalanche energy E
AS
80 mJ
Maximum power dissipation
a
T
A
= 25 °C
P
D
5.4 1.9
W
T
A
= 70 °C 3.4 1.2
Operating junction and storage temperature range T
J
, T
stg
-55 to 150
°C
Soldering recommendations (peak temperature)
b, c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a
t 10 s
R
thJA
18 23
°C/WSteady state 50 65
Maximum junction-to-case (drain) Steady state R
thJC
11.5
Si7439DP
www.vishay.com
Vishay Siliconix
S18-0353-Rev. F, 26-Mar-18
2
Document Number: 73106
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics Transfer Characteristics
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -2 - -4 V
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= -150 V, V
GS
= 0 V - - -1
μA
V
DS
= -150 V, V
GS
= 0 V, T
J
= 70 °C - - -10
On-state drain current
a
I
D(on)
V
DS
= -10 V, V
GS
= -10 V -30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -5.2 A - 0.073 0.090
V
GS
= -6 V, I
D
= -5 A - 0.077 0.095
Forward transconductance
a
g
fs
V
DS
= -15 V, I
D
= -5.2 A - 19 - S
Diode forward voltage
a
V
SD
I
S
= -4.2 A, V
GS
= 0 V - -0.78 -1.2 V
Dynamic
b
Total gate charge Q
g
V
DS
= -75 V, V
GS
= -10 V, I
D
= -5.2 A
- 88 135
nCGate-source charge Q
gs
- 17.5 -
Gate-drain charge Q
gd
- 26.5 -
Gate resistance R
g
1.5 3 4.5
Turn-on delay time t
d(on)
V
DD
= -75 V, R
L
= 15.5
I
D
-4.8 A, V
GEN
= -10 V, R
g
= 6
-2540
ns
Rise time t
r
-4670
Turn-off delay time t
d(off)
- 115 180
Fall time t
f
- 64 100
Source-drain reverse recovery time t
rr
I
F
= -2.9 A, di/dt = 100 A/μs - 100 150
0
5
10
15
20
25
30
35
40
0246810
V
GS
= 10 V thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
T
C
= 125 °C
55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
-
25 °C
Si7439DP
www.vishay.com
Vishay Siliconix
S18-0353-Rev. F, 26-Mar-18
3
Document Number: 73106
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0.00
0.03
0.06
0.09
0.12
0.15
0 1020304050
V
GS
= 6 V
- On-Resistance )R
DS(on)
I
D
- Drain Current (A)
V
GS
= 10 V
0
2
4
6
8
10
0 153045607590
V
DS
= 75 V
I
D
= 5.2 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
0.1
10
40
0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
1
0
1000
2000
3000
4000
5000
6000
0 30 60 90 120 150
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.4
0.7
1.0
1.3
1.6
1.9
2.2
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 5.2 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
0.00
0.04
0.08
0.12
0.16
0.20
02 10
I
D
= 5.2 A
- On-Resistance ()R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
4
6
8
P1-P3P4-P6P7-P9P10-P12

SI7439DP-T1-E3

Mfr. #:
Buy SI7439DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -150V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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