IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
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2
2
0
F
BTA312X-800B
3Q Hi-Com Triac
28 May 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt
and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at
the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High voltage capability
Isolated mounting base package
Less sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 100 A
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 59 °C; Fig. 1; Fig. 2;
Fig. 3
- - 12 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
2 - 50 mA
NXP Semiconductors
BTA312X-800B
3Q Hi-Com Triac
BTA312X-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
2 - 50 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
2 - 50 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA312X-800B TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A

BTA312X-800B,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL-THYR AND TRIACS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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