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PMBFJ108,215

P1-P3P4-P6P7-P9
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features and benefits
High-speed switching
Interchangeability of drain and source connections
Low R
DSon
at zero gate voltage (8 for PMBFJ108).
1.3 Applications
Analog switches
Choppers and commutators
Audio amplifiers.
2. Pinning information
[1] Drain and source are interchangeable.
PMBFJ108; PMBFJ109;
PMBFJ110
N-channel junction FETs
Rev. 4 — 20 September 2011 Product data sheet
SOT23
Table 1. Pinning
Pin Description
[1]
Simplified outline Symbol
1drain
2source
3gate
12
3
sym053
1
23
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 2 of 9
NXP Semiconductors
PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
[1] Mounted on an FR4 printed-circuit board.
6. Thermal characteristics
[1] Mounted on an FR4 printed-circuit board.
Table 2. Ordering information
Type number Package
Name Description Version
PMBFJ108 - plastic surface mounted package; 3 leads SOT23
PMBFJ109
PMBFJ110
Table 3. Marking
Type number Marking code
[1]
PMBFJ108 38*
PMBFJ109 39*
PMBFJ110 40*
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) - 25 V
V
GSO
gate-source voltage - 25 V
V
GDO
gate-drain voltage - 25 V
I
G
forward gate current (DC) - 50 mA
P
tot
total power dissipation T
amb
= 25 C
[1]
-250mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient
[1]
500 K/W
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 3 of 9
NXP Semiconductors
PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
7. Static characteristics
8. Dynamic characteristics
[1] Test conditions for switching times are as follows:
V
DD
= 1.5 V, V
GS
=0VtoV
GSoff
(all types);
V
GSoff
= 12 V, R
L
= 100 (PMBFJ108);
V
GSoff
= 7V, R
L
=100 (PMBFJ109);
V
GSoff
= 5V, R
L
=100 (PMBFJ110).
Table 6. Static characteristics
T
j
=25
C.
Symbol Parameter Conditions Min Typ Max Unit
I
GSS
gate-source leakage current V
GS
= 15 V; V
DS
=0V - - 3nA
I
DSX
drain-source cut-off current V
GS
= 10 V; V
DS
=5V - - 3 nA
I
DSS
drain-source leakage current
PMBFJ108 V
GS
=0V; V
DS
=15V 80--mA
PMBFJ109 V
GS
=0V; V
DS
=15V 40--mA
PMBFJ110 V
GS
=0V; V
DS
=15V 10--mA
V
(BR)GSS
gate-source breakdown voltage I
G
= 1 A; V
DS
=0V - - 25 V
V
GSoff
gate-source cut-off voltage
PMBFJ108 I
D
=1A; V
DS
=5V 10 - 3V
PMBFJ109 I
D
=1A; V
DS
=5V 6- 2V
PMBFJ110 I
D
=1A; V
DS
=5V 4- 0.5 V
R
DSon
drain-source on-state resistance
PMBFJ108 V
GS
=0V; V
DS
=0.1V - - 8
PMBFJ109 V
GS
=0V; V
DS
=0.1V - - 12
PMBFJ110 V
GS
=0V; V
DS
=0.1V - - 18
Table 7. Dynamic characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
C
iss
input capacitance V
DS
=0V; V
GS
= 10 V; f = 1 MHz - 15 30 pF
V
DS
=0V; V
GS
= 0 V; f = 1 MHz; T
amb
=25C - 50 85 pF
C
rss
feedback capacitance V
DS
=0V; V
GS
= 10 V; f = 1 MHz - 8 15 pF
Switching times (see Figure 2
)
t
d
delay time
[1]
-2-ns
t
on
turn-on time
[1]
-4-ns
t
s
storage time
[1]
-4-ns
t
off
turn-off time
[1]
-6-ns
P1-P3P4-P6P7-P9

PMBFJ108,215

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Buy PMBFJ108,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors JFET N-CH 25V 6MA
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