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NTD4965NT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 3
1 Publication Order Number:
NTD4965N/D
NTD4965N
Power MOSFET
30 V, 68 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Three Package Variations for Design Flexibility
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
17.8
A
T
A
= 100°C 12.6
Power
Dissipation R
q
JA
(Note 1)
T
A
= 25°C P
D
2.6 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
13.0
A
T
A
= 100°C 9.2
Power
Dissipation R
q
JA
(Note 2)
T
A
= 25°C P
D
1.39 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
68
A
T
C
= 100°C 48
Power
Dissipation R
q
JC
(Note 1)
T
C
= 25°C P
D
38.5 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
248 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
76 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+175
°C
Source Current (Body Diode) I
S
35 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 31 A
pk
, L = 0.1 mH, R
G
= 25 W)
EAS 47 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
4.7 mW @ 10 V
68 A
10 mW @ 4.5 V
G
S
N−CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
AYWW
49
65NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Sourc
e
4
Drain
2
Drain
1
Gate
3
Source
AYWW
49
65NG
AYWW
49
65NG
A = Assembly Location
Y = Year
WW = Work Week
4965N = Device Code
G = Pb−Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1
2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4
NTD4965N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
3.9
°C/W
Junction−to−TAB (Drain)
R
q
JC−TAB
4.3
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
57.6
Junction−to−Ambient – Steady State (Note 4)
R
q
JA
107.6
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
21.5
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 1.8 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.1
mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 30 A 3.4 4.7
mW
I
D
= 15 A 3.4
V
GS
= 4.5 V
I
D
= 30 A 5.4 10
I
D
= 15 A 5.3
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 30 A 52 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
1710
pF
Output Capacitance C
OSS
664
Reverse Transfer Capacitance C
RSS
340
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
17.2
nC
Threshold Gate Charge Q
G(TH)
2.7
Gate−to−Source Charge Q
GS
5.1
Gate−to−Drain Charge Q
GD
8.5
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 30 A 28.2 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
12.1
ns
Rise Time t
r
34.2
Turn−Off Delay Time t
d(OFF)
18.9
Fall Time t
f
14.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
NTD4965N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
8.3
ns
Rise Time t
r
21.5
Turn−Off Delay Time t
d(OFF)
24.4
Fall Time t
f
7.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.86 1.1
V
T
J
= 125°C 0.74
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
28.3
ns
Charge Time t
a
13.3
Discharge Time t
b
15
Reverse Recovery Charge Q
RR
16 nC
PACKAGE PARASITIC VALUES
Source Inductance (Note 7)
L
S
T
A
= 25°C
2.85
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK (Note 7) L
D
1.88
Gate Inductance (Note 7) L
G
4.9
Gate Resistance R
G
1.0 2.2
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Device Package Shipping
†
NTD4965NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4965N−1G IPAK
(Pb−Free)
75 Units / Rail
NTD4965N−35G IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P7

NTD4965NT4G

Mfr. #:
Buy NTD4965NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET TRENCH 3.1 30V 4 mOhm NCH
Lifecycle:
New from this manufacturer.
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