BSS123E6327

BSS 123
Data Sheet 4 05.99
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 ˚C
I
S
- - 0.17
A
Inverse diode direct current,pulsed
T
A
= 25 ˚C
I
SM
- - 0.68
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.34 A,
T
j
= 25 ˚C
V
SD
- 0.85 1.3
V
BSS 123
Data Sheet 5 05.99
Power dissipation
P
tot
=
ƒ
(
T
A
)
0 20 40 60 80 100 120 ˚C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
W
0.40
P
tot
Drain current
I
D
=
ƒ
(
T
A
)
parameter:
V
GS
10 V
0 20 40 60 80 100 120 ˚C 160
T
A
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
A
0.18
I
D
Safe operating area
I
D
=f(
V
DS
)
parameter :
D
= 0.01,
T
C
=25˚C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(
T
j
)
-60 -20 20 60 100 ˚C 160
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
116
V
120
V
(BR)DSS
BSS 123
Data Sheet 6 05.99
Typ. output characteristics
I
D
=
ƒ(
V
DS
)
parameter:
t
p
= 80 µs ,
T
j
= 25 ˚C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V
DS
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
A
0.38
I
D
V
GS
[V]
a
a 2.0
b
b 2.5
c
c 3.0
d
d 3.5
e
e 4.0
f
f 4.5
g
g 5.0
h
h 6.0
i
i 7.0
j
j 8.0
k
k 9.0
l
P
tot
= 0W
l 10.0
Typ. drain-source on-resistance
R
DS (on)
=
ƒ(
I
D
)
parameter:
t
p
= 80 µs,
T
j
= 25 ˚C
0.00 0.04 0.08 0.12 0.16 0.20 A 0.28
I
D
0
2
4
6
8
10
12
14
16
19
R
DS (on)
V
GS
[V] =
a
2.0
V
GS
[V] =
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
6.0
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics
I
D
= f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
2 x
I
D
x
R
DS(on)max
0 1 2 3 4 5 6 7 8 V 10
V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
1.0
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 µs,
V
DS
2 x
I
D
x
R
DS(on)max
0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
S
0.40
g
fs

BSS123E6327

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Lifecycle:
New from this manufacturer.
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