IXFT94N30T Datasheet IXFT94N30T, IXFH94N30T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 300 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 300 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 94 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

235 A

I

A

T

C

= 25°C 47 A

E

AS

T

C

= 25°C 500 mJ

P

D

T

C

= 25°C 890 W

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 20 V/ns

T

J

-55 to +150 °C

T

JM

+150 °C

T

stg

-55 to +150 °C

T

L

1.6mm (0.063in) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-268 4 g

TO-247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 300 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4mA 3.0 5.0 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 50 μA

T

J

= 125°C 2 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 36 mΩ

Trench

TM

HiperFET

TM

Power MOSFETs

IXFT94N30T

IXFH94N30T

DS100383A(11/11)

V

DSS

= 300V

I

D25

= 94A

R

DS(on)

≤≤

≤ 36m

ΩΩ

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Features

z

International Standard Packages

z

Avalanche Rated

z

High Current Handling Capability

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

AC Motor Drives

z

Uninterruptible Power Supplies

z

High Speed Power Switching

Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT94N30T

IXFH94N30T

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 55 95 S

C

iss

11.4 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 917 pF

C

rss

116 pF

t

d(on)

40 ns

t

r

14 ns

t

d(off)

45 ns

t

f

12 ns

Q

g(on)

190 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

65 nC

Q

gd

53 nC

R

thJC

0.14 °C/W

R

thCS

TO-247 0.21 °C/W

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2Ω (External)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 94 A

I

SM

Repetitive, Pulse Width Limited by T

JM

376 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

155 ns

I

RM

10.6 A

Q

RM

816 nC

I

F

= 47A, -di/dt = 100A/μs,

V

R

=

100V, V

GS

= 0V

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate 2,4 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3 3.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6

V

5

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

0 5 10 15 20 25

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5

V

6

V

7

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

70

80

90

100

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6

V

5

V

4

V

Fig. 4. R

DS(on)

Normalized to I

D

= 47A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50-25 0 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 94A

I

D

= 47A

Fig. 5. R

DS(on)

Normalized to I

D

= 47A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 40 80 120 160 200 240

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10

V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

80

90

100

-50-25 0 255075100125150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFT94N30T

IXFH94N30T

IXFT94N30T

IXFT94N30T

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