VS-30EPH03PBF

VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 09-Jul-15
1
Document Number: 94017
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 30 A FRED Pt
®
FEATURES
Ultrafast recovery time
Low forward voltage drop
175 °C operating junction temperature
Low leakage current
Designed and qualified according to
JEDEC
®
-JESD 47
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATION
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
30 A
V
R
300 V
V
F
at I
F
0.9 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Single die
Base
common
cathode
2
13
Cathode Anode
1
2
3
TO-247AC modified
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
300 V
Average rectified forward current I
F(AV)
T
C
= 143 °C 30
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 300
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 300 - -
V
Forward voltage V
F
I
F
= 30 A - 1.08 1.25
I
F
= 30 A, T
J
= 125 °C - 0.9 1.00
Reverse leakage current I
R
V
R
= V
R
rated - 0.05 60
μA
T
J
= 125 °C, V
R
= V
R
rated - 280 600
Junction capacitance C
T
V
R
= 300 V - 90 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 3.5 - nH
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 09-Jul-15
2
Document Number: 94017
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 55
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
-38-
T
J
= 125 °C - 52 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 7.3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 53 -
nC
T
J
= 125 °C - 190 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-0.50.9
°C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.4 -
Weight
-6.0- g
-0.22- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf in)
Marking device Case style TO-247AC modified 30EPH03
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
Revision: 09-Jul-15
3
Document Number: 94017
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
1000
0.2 1.81.00.8 1.4
I
F
- Instantaneous
Forward Current (A)
100
0.6 1.2 1.60.4
V
F
- Forward Voltage Drop (V)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
100
0 100 200
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
150
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
50
0.001
1000
300250
100
1000
0 100 200 250 300
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
15050
T
J
= 25 °C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
.
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-30EPH03PBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 300 Volt 30 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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