NUP4202W1T2G Datasheet NUP4202W1T2G | P1-P3

October, 2017 − Rev. 4

1 Publication Order Number:

NUP4202W1/D

NUP4202W1

ESD Protection Diode, Low

Clamping Voltage

The NUP4202W1 surge protection is designed to protect high speed

data lines from ESD, EFT, and lightning.

Features

• Low Clamping Voltage

• Stand−Off Voltage: 5 V

• Low Leakage

• Protection for the Following IEC Standards:

IEC 61000−4−2 Level 4 ESD Protection

• UL Flammability Rating of 94 V−0

• This is a Pb−Free Device

Typical Applications

• High Speed Communication Line Protection

• USB 1.1 and 2.0 Power and Data Line Protection

• Digital Video Interface (DVI) and HDMI

• Monitors and Flat Panel Displays

• MP3

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Peak Power Dissipation

8 x 20 mS @ T

= 25°C (Note 1)

500 W

Operating Junction Temperature Range T

−40 to +125 °C

Storage Temperature Range T

stg

−55 to +150 °C

Lead Solder Temperature −

Maximum (10 Seconds)

260 °C

Human Body Model (HBM)

Machine Model (MM)

IEC 61000−4−2 Air (ESD)

IEC 61000−4−2 Contact (ESD)

ESD 16000

400

20000

IEC 61000−4−4 (5/50 ns) EFT 40 A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2).

See Application Note AND8308/D for further description of

survivability specs.

SC−88 LOW CAPACITANCE

DIODE SURGE PROTECTION

ARRAY

500 WATTS PEAK POWER

6 VOLTS

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

SC−88

CASE 419B

PLASTIC

PIN CONFIGURATION

AND SCHEMATIC

6 I/O

5 V

4 I/O

I/O 1

I/O 3

www.onsemi.com

NUP4202W1T2G SC−88

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

63 MG

63 = Specific Device Code

M = Date Code

G = Pb−Free Package

(Note: Microdot may be in either location)

NUP4202W1

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

Peak Power Dissipation

C Capacitance @ V

= 0 and f = 1.0 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

RWM

Uni−Directional

ELECTRICAL CHARACTERISTICS (T

=25°C unless otherwise specified)

Parameter

Symbol Conditions Min Typ Max Unit

Reverse Working Voltage V

RWM

(Note 2) 5.0 V

Breakdown Voltage V

= 1 mA, (Note 3) 6.0 V

Reverse Leakage Current I

RWM

= 5 V 5.0

Clamping Voltage V

= 5 A (Note 4) 8.5 12.5 V

Clamping Voltage V

= 8 A (Note 4) 8.9 20 V

Maximum Peak Pulse Current I

8x20 ms Waveform (Note 4)

28 A

Junction Capacitance C

= 0 V, f = 1 MHz between I/O Pins and GND 3.0 5.0 pF

Junction Capacitance C

= 0 V, f = 1 MHz between I/O Pins 1.5 3.0 pF

Clamping Voltage V

@ I

= 1 A (Notes 5 and 6) 14.5 V

Clamping Voltage V

Per IEC 61000−4−2 (Note 7) Figure 1 and 2 V

2. Rurge protection devices are normally selected according to the working peak reverse voltage (V

RWM

), which should be equal or greater

than the DC or continuous peak operating voltage level.

3. V

is measured at pulse test current I

4. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2).

5. Nonrepetitive current pulse per Figure 5 (Any I/O Pins).

6. Surge current waveform per Figure 5.

7. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

NUP4202W1

www.onsemi.com

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Figure 4. Diagram of ESD Test Setup

50 W

Cable

Oscilloscope

ESD Gun

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

Figure 5. 8 X 20 ms Pulse Waveform

100

020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (t

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE I

RSM

@ 8 ms

HALF VALUE I

RSM

/2 @ 20 ms

P1-P3 P4-P6 P7-P9

NUP4202W1T2G

Mfr. #:

Buy NUP4202W1T2G

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors LOW CAP DIODE TVS ARRAY

Lifecycle:

New from this manufacturer.

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