EK42821-02 Datasheet EK42821-02 | P1-P3

Document No. DOC-13714-4 │ www.psemi.com

Page 1 of 12

Figure 2. Package Type

32-lead 5 × 5 mm QFN

Product Description

The PE42821 is a HaRP™ technology-enhanced high

power reflective SPDT RF switch designed for use in

mobile radio, relay replacement and other high

performance wireless applications.

This switch is a pin-compatible faster switching version of

the PE42820. It maintains high linearity and power

handling from 100 MHz through 2.7 GHz. PE42821 also

features low insertion loss and is offered in a 32-lead

5 × 5 mm QFN package. In addition, no external blocking

capacitors are required if 0 VDC is present on the RF

ports.

The PE42821 is manufactured on Peregrine’s

UltraCMOS

®

process, a patented variation of silicon-on-

insulator (SOI) technology on a sapphire substrate.

Peregrine’s HaRP technology enhancements deliver high

linearity and excellent harmonics performance. It is an

innovative feature of the UltraCMOS process, offering the

performance of GaAs with the economy and integration of

conventional CMOS.

Product Specification

Figure 1. Functional Diagram

PE42821

Features

 High power handling

 45 dBm @ 850 MHz, 32W

 44 dBm @ 2 GHz, 25W

 High linearity

 82 dBm IIP3 @ 850 MHz

 76 dBm IIP3 @ 2.7 GHz

 Low insertion loss

 0.35 dB @ 850 MHz

 0.60 dB @ 2 GHz

 Fast switching time of 4 µs

(bypass mode)

 Wide supply range of 2.3–5.5V

 +1.8V control logic compatible

 ESD performance

 1.5 kV HBM on all pins

 External negative supply option

DOC-52312

UltraCMOS

®

SPDT RF Switch

100–2700 MHz

Product Specification

PE42821

Page 2 of 12

®

RFIC Solutions

Table 1. Electrical Specifications @ +25 °C (Z

S

= Z

L

= 50Ω), unless otherwise noted

Normal mode

1

: V

DD

= 3.3V, V

SS_EXT

= 0V or Bypass mode

2

: V

DD

= 3.3V, V

SS_EXT

= –3.3V

Parameter Path Condition Min Typ Max Unit

Insertion loss

3

RFC–RFX

100 MHz–1 GHz

0.40 0.55 dB

1–2 GHz

0.60 0.80 dB

2–2.7 GHz

0.80 1.05 dB

Isolation RFX–RFX

100 MHz–1 GHz

33 35 dB

1–2 GHz

26 28 dB

2–2.7 GHz

22 24 dB

Unbiased isolation RFC–RFX V

DD

, V1 = 0V, +27 dBm 6 dB

Return loss

3

RFX

100 MHz–1 GHz

20 dB

1–2 GHz

13 dB

2–2.7 GHz

14 dB

Harmonics RFC–RFX

2fo: +45 dBm pulsed @ 1GHz, 50Ω

3fo: +45 dBm pulsed @ 1GHz, 50Ω

–82 –78 dBc

–85 –81 dBc

Input IP3

RFC–RFX

850 MHz

2700 MHz

82 dBm

76 dBm

Input 0.1 dB compression point

4

RFC–RFX

100 MHz–2 GHz

2–2.7 GHz

45.5

44.5

dBm

Switching time in normal mode

1

50% CTRL to 90% or 10% RF 7 11 µs

Settling time 50% CTRL to harmonics within specifications

5

15 25 µs

Switching time in bypass mode

2

50% CTRL to 90% or 10% RF 4 µs

Notes: 1. Normal mode: single external positive supply used.

2. Bypass mode: both external positive supply and external negative supply used.

3. Performance specified with external matching. Refer to Evaluation Kit section for additional information.

4. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the operating RF input power (50Ω).

5. See harmonics specs above.

Product Specification

PE42821

Page 3 of 12

Table 2. Pin Descriptions

Table 3. Operating Ranges Figure 3. Pin Configuration (Top View)

Pin # Pin Name Description

1, 3–11,

14, 15, 17–

22, 24–27,

29–32

GND Ground

2 RF1

1

RF port

12 V

DD

Supply voltage (nominal 3.3V)

16 V

SS_EXT

2

External V

SS

negative voltage control

23 RF2

1

RF port

28 RFC

1

RF common

Pad GND Exposed pad: ground for proper operation

13 V1 Digital control logic input 1

Parameter Symbol Min Typ Max Unit

Normal mode

1

Supply voltage V

DD

2.3 5.5 V

Supply current I

DD

130 200 µA

Bypass mode

2

Supply voltage V

DD

3.3 5.5 V

Supply current I

DD

50 80 µA

Negative supply

voltage

V

SS_EXT

–3.6 –3.2 V

Negative supply

current

I

SS

–40 –16 µA

Digital input high (V1) V

IH

1.17 3.6

3

V

Digital input low (V1) V

IL

–0.3 0.6 V

RF input power, CW

100 MHz–2 GHz

>2–2.7 GHz

P

MAX,CW

43

42

dBm

RF input power,

pulsed

4

100 MHz–2 GHz

>2–2.7 GHz

P

MAX,PULSED

45

44

dBm

RF input power,

unbiased

P

MAX,UNB

27

dBm

Operating temperature

range (Case)

T

OP

–40 +85 °C

Operating junction

temperature

T

J

+140 °C

Normal or Bypass mode

Notes: 1. Normal mode: connect pin 16 to GND to enable internal negative

voltage generator.

2. Bypass mode: apply a negative voltage to V

SS_EXT

(pin 16) to by-

pass and disable internal negative voltage generator.

3. Maximum V

IH

voltage is limited to V

DD

and cannot exceed 3.6V.

4. Pulsed, 10% duty cycle of 4620

µs period, 50Ω.

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

GND

RF1

GND

RF2

GND

Exposed

Ground Pad

Pin 1 Dot

Marking

Notes: 1. RF pins 2, 23 and 28 must be at 0 VDC. The RF pins do not require

DC blocking capacitors for proper operation if the 0 VDC requirement

is met.

2. Use V

SS_EXT

(pin 16, V

SS_EXT

= –V

DD

) to bypass and disable internal

negative voltage generator. Connect V

SS_EXT

(pin 16, V

SS_EXT

= GND) to

enable internal negative voltage generator.

EK42821-02

EK42821-02

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