ESDA8V2-1J

August 2009 Doc ID 15646 Rev 1 1/7
7
ESDA8V2-1J
EOS and ESD Transil™ protection for charger and battery port
Features
Breakdown voltage V
BR
= 8.2 V
Unidirectional device
High peak power dissipation: 500 W
(8/20 µs waveform)
ESD protection level better than
IEC 61000-4-2, level 4:
30 kV contact discharge
Low leakage current (< 0.5 µA @ 5 V)
Benefits
High EOS and ESD protection level
High integration
Suitable for high density boards
Complies with the following standards:
IEC 61000-4-2 level 4
±15 kV (air discharge)
±8 kV (contact discharge)
MIL STD 883G - Method 3015-7: class 3B
HBM (human body model): 8kV
Applications
This product is particularly recommended for the
protection of power supply lines of portable
devices, where EOS and ESD transient
overvoltage protection in sensitive equipment is
required, such as:
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
Figure 1. Functional diagram (top view)
Description
The ESDA8V2-1J is a unidirectional single line
Transil diode designed specifically for the
protection of integrated circuits in portable
equipment and miniaturized electonic devices
subject to EOS and ESD transient overvoltages.
TM: Transil is a trademark of STMicroelectronics
K
A
SOD-323
www.st.com
Characteristics ESDA8V2-1J
2/7 Doc ID 15646 Rev 1
1 Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
ESD discharge:
IEC 61000-4-2 air discharge on input pin
IEC 61000-4-2 contact discharge on input pin
MIL STD 883G - Method 3015-7: class 3B
±30
±30
±30
kV
P
PP
Peak pulse power dissipation (8/20 µs)
(1)
T
j initial
= T
amb
500 W
I
PP
Peak pulse current (8/20 µs) 25 A
T
j
Junction temperature range -40 to +125 °C
T
stg
Storage temperature range - 55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
1. For a surge greater than the maximum values, the diode will fail in short-circuit
Table 2. Electrical characteristics (definitions)
Symbol Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-of voltage
V
CL
Clamping voltage
I
PP
Peak pulse current
C Input capacitance
VV V
I
RM
I
R
I
PP
V
I
I
F
V
V
Slope= 1/R
d
VV
CL
V
BR
RM
V
F
Table 3. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Parameter Test condition Min. Typ. Max. Unit
V
BR
Breakdown voltage I
R
= 1 mA 8.2 - - V
I
RM
Leakage current @ V
RM
V
RM
= 5 V -0.10.5µA
V
CL
Clamping voltage
(8/20 µs waveform)
I
PP
= 1 A - - 11 V
I
PP
= 5 A - - 13 V
I
pp
= 25 A - - 20 V
C Input capacitance
V
R
= 0 V, F
osc
= 1 MHz,
V
osc
= 30 mV
- 210 250 pF
ESDA8V2-1J Characteristics
Doc ID 15646 Rev 1 3/7
Figure 2. Relative variation of peak pulse
power versus initial junction
temperature
Figure 3. Peak pulse power versus
exponential pulse duration
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 25 50 75 100 125 150
T
j
(°C)
P
PP
(W)
1
10
100
1000
10000
1 10 100 1000
T
j
initial = 25 °C
t
P
(µs)
Figure 4. Clamping voltage versus peak
pulse current (typical values,
exponential waveform)
Figure 5. Forward voltage drop versus peak
forward current (typical values)
I
PP
(A)
0.1
1.0
10.0
100.0
8 1012141618
T
p
= 8/20 µs
T
j
initial =25 °C
V
CL
(V)
I
FM
(A)I
FM
(A)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0
.4
0
.
60
.
8
1.
0
1.2 1.4 1.
6
T
j
=125 °C
T
j
=25 °C
V
FM
(V)V
FM
(V)
Figure 6. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 7. Relative variation of leakage
current versus juntion temperature
(typical values)
C (pF)
0
50
100
150
200
250
012345678
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
V
line
(V)
1
10
100
25 50 75 100 125
I
R
[T
j
]/I
R
[T
j
=25°C]
V
R
=5V
T
j
(°C)

ESDA8V2-1J

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors EOS ESD Transil Charger Battery Port
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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