BB149A,115

1. Product profile
1.1 General description
The BB149A is a variable capacitance diode, fabricated in planar technology and
encapsulated in the SOD323 very small SMD plastic package. The excellent matching
performance is achieved by gliding matching and a Direct Matching Assembly (DMA)
procedure.
1.2 Features and benefits
Excellent linearity
Excellent matching to 2 % DMA
Very small SMD plastic package
C
d(28V)
: 2.1 pF; C
d(1V)
to C
d(28V)
ratio: 9
Low series resistance.
1.3 Applications
Electronic tuning in UHF television tuners
Voltage Controlled Oscillators (VCO).
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
BB149A
UHF variable capacitance diode
Rev. 4 — 5 September 2011 Product data sheet
Table 1. Pinning
Pin Description Simplified outline
[1]
Symbol
1 cathode
2 anode
21
sym008
Table 2. Ordering information
Type number Package
Name Description Version
BB149A SC-76 plastic surface mounted package; 2 leads SOD323
BB149A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 5 September 2011 2 of 8
NXP Semiconductors
BB149A
UHF variable capacitance diode
4. Marking
5. Limiting values
6. Characteristics
[1] V
R
is the value at which C
d
=9pF
Table 3. Marking
Type number Marking code
BB149A PL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
V
RM
peak reverse voltage in series with a
10 k resistor
-35V
I
F
forward current - 20 mA
T
stg
storage temperature 55 +150 C
T
j
junction temperature 55 +125 C
Table 5. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current V
R
=30V
see Figure 2
--10nA
T
j
=85C; see Figure 2 --200nA
r
s
diode series
resistance
f = 470 MHz
[1]
- 0.6 0.75
C
d
diode
capacitance
f = 1 MHz; see Figure 1 and 3
V
R
= 1 V 18.22 - 21.26 pF
V
R
= 28 V 1.951 2.1 2.225 pF
capacitance ratio f = 1 MHz - 1.27 -
capacitance ratio f = 1 MHz 8.45 9 10.9
capacitance ratio f = 1 MHz - 1.05 -
capacitance
matching
V
R
=1Vto28V; in a
sequence of 10 diodes
(gliding)
--2%
C
d1V
C
d2V
----------------
C
d1V
C
d28V
------------------
C
d25V
C
d28V
------------------
C
d
C
d
----------
BB149A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 5 September 2011 3 of 8
NXP Semiconductors
BB149A
UHF variable capacitance diode
f=1MHz; T
j
=25C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
T
j
=0C to 85 C.
Fig 2. Reverse current as a function of junction
temperature; maximum values.
Fig 3. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical
values.
mlc391
10
20
30
C
d
(pF)
0
V
R
(V)
10
1
10
2
101
mlc815
110
10
3
10
4
10
5
10
1
10
2
V
R
(V)
TC
d
(K
1
)

BB149A,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE UHF VAR CAP 30V SOD323
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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