NTD4815N, NVD4815N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
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10 0 10 15 30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1000
0
V
GS
V
DS
1400
55
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
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C
iss
1300
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
1
4
65
I
D
= 30 A
T
J
= 25°C
Q
2
Q
1
Q
T
7
0
0.4
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 0.7 1.1
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8 0.9
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 11 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
10
30
40
100 125
50
70
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
150
500
20
25
1200
1100
900
800
700
600
100
400
300
200
0.5 1.0
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
0
8
4
6
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
5
10
12
14
V
GS
V
DS
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