IRF6643TRPBF

4
www.irf.com © 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Typical Threshold Voltage vs.
Junction Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
I
SD
, Reverse Drain Current (A)
V
GS
= 0V
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
0.1 1.0 10.0 100.0 1000.0
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
A
= 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
25 50 75 100 125 150
T
J
, Ambient Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
I
D
= 150µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
5
www.irf.com © 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
Fig 12. Typical On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 15a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 14. Maximum Avalanche Energy vs. Drain Current
t
p
V
(BR)DSS
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
40
80
120
160
200
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
1.5A
3.0A
BOTTOM
15A
0 10 20 30 40 50
I
D
, Drain Current (A)
25
30
35
40
45
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
V
GS
= 7.0V
V
GS
= 8.0V
V
GS
= 10V
V
GS
= 15V
4 6 8 10 12 14 16
V
GS,
Gate -to -Source Voltage (V)
20
30
40
50
60
70
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 7.6A
T
J
= 25°C
T
J
= 125°C
6
www.irf.com © 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
Fig 17a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 17b. Gate Charge Waveform
VDD
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs

IRF6643TRPBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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