SIM-030ST

SIM-030ST
Applications
Light source for sensors
(proximity sensors,
signal transmission applications)
Features
1) Higt compact, low-profile
2) Higt output, over a narrow angle
3) Exellent temperature property
4) Long life,high reliability
5) Original optical tecnology is
ultra-high-output surface mount
infrared LEDs.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Surface Mount High Output Infrared LEDs
Fig.4 Relative radiant vs.
Ambient temperature
-25 0 25 50 75 100
RELATIVE RADIANT INTENSITY
AMBIENT TEMPERATURE : Ta (°C)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF=100mA
Fig.3 Radiant intensity vs.
Forward current
RADIANT INTENSITY : Ie (mW / sr)
FORWARD CURRENT : IF (mA)
0 100 200
50
60
30
20
40
10
0
Fig.1 Forward current fall off
FORWARD CURRENT : IF (mA)
AMBIENT TEMPERATURE : Ta (°C)
0
20
40
60
80
100
120
-25 0 25 50 75 100
Fig.2 Forward current vs.
Forward voltage
0 0.5 1 1.5 2 2.5 3
1
10
100
1000
25°C
0°C
25°C
60°C
85°C
FORWARD VOLTAGE : V
F (V)
FORWARD CURRENT : IF (mA)
Fig.5 Spectrum data
OPTICAL WAVELENGTH : λp (nm)
RERATIVE SENSITIVITY
0.0
0.2
0.4
0.6
0.8
1.0
700 750 800 850 900 950 1000 1050
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
View angle
Radiant intensity
Parameter
Non-coherent infrared light emiting diode used.
This product is not designed to be protected against electromagnetic wave.
Symbol
I
E
VF
IR
θ1/2
Min.
Typ.
10 100
1.7
±20
Max.
2.5
15
Unit
mW/sr IF=100mA
I
F=100mA
V
R=5VμA
870
IF=100mA
nm
deg.
V
Conditions
λpeak
35
IF=100mA
nm
Δ
λ
Fig.6 Radiant intensity
RERATIVE RADIANT INTENSITY
6090 0 3030 60 90
0.9
1
0.7
0.8
0.5
0.6
0.4
0.2
0.3
0.1
0
ANGLE : deg
IF=100mA
Forward current
Pulse forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Parameter Symbol Limits Unit
I
I
F 100 mA
FP 1A
VR 5V
P
D 180 mW
Tstg -40 to + 85
°C
Topr -25 to + 85
°C
*1
*1 Pulse width 0.1msec,duty ratio1%
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.15 .
2. Dimension in parenthesis are
show for reference.
2010.11 Rev.B
Fig.7 Wavelength vs.
Ambient temperature
WAVELENGTH : ƒλp (nm)
AMBIENT TEMPERATURE : Ta (°C)
25 50250 10075
850
855
860
865
870
875
880
IF=100mA
1.950.9
(1.0)
2.3
1.5
1.65
0.40.4
0.15 0.15
Cathode Anode
Backside Matellisation
Cathode Anode
Internal connection diagram
R1010
A
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SIM-030ST

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Infrared Emitters Infrared LED Top View Type
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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