4
RF Device Data
NXP Semiconductors
AFT27S012NT1
Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2200 MHz
C7
C6
R1
C2
C1*
C13
C12
C4
C5*
C3
C8
C9
C10
C11
AFT27S010N
Rev. 2
2100MHz
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink. AFT27S012N uses the AFT27S0101N production fixture;
board and parts list are identical.
Q1
D53402
V
DD
V
GG
V
DD
Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2200 MHz
Part Description Part Number Manufacturer
C1, C5, C6, C8, C9 9.1 pF Chip Capacitors ATC100B9R1JT500XT ATC
C2 1.1 pF Chip Capacitor ATC100B1R1JT500XT ATC
C3 2.0 pF Chip Capacitor ATC100B2R0JT500XT ATC
C4 1.0 pF Chip Capacitor ATC100B1R0JT500XT ATC
C7, C10, C11, C12, C13 10 F Chip Capacitors GRM32ER61H106KA12L Murata
Q1 RF Power LDMOS Transistor AFT27S010N NXP
R1 2.37 Chip Resistor CRCW12062R37FKEA Vishay
PCB Rogers RO4350B, 0.020,
r
=3.66 D53402 MTL
