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MIC5016BN

P1-P3P4-P6P7-P9P10-P12
MIC5016/5017 Micrel
October 1998 1 MIC5016/5017
Features
• 2.75V to 30V operation
• 100µA maximum supply current (5V supply)
•15µA typical off-state current
• Internal charge pump
• TTL compatible input
• Withstands 60V transient (load dump)
• Reverse battery protected to –20V
• Inductive spike protected to –20V
• Overvoltage shutdown at 35V
• Internal 15V gate protection
• Minimum external parts
• Operates in high-side or low-side configurations
•1µA control input pull-off
• Inverting and noninverting versions
Applications
• Automotive electrical load control
• Battery-powered computer power management
• Lamp control
• Heater control
• Motor control
• Power bus switching
Ordering Information
Part Number Temperature Range Package
Noninverting
MIC5016BWM –40°C to +85°C 16-pin Wide SOIC
MIC5016BN –40°C to +85°C 14-pin Plastic DIP
Inverting
MIC5017BWM –40°C to +85°C 16-pin Wide SOIC
MIC5017BN –40°C to +85°C 14-pin Plastic DIP
MIC5016/5017
Low-Cost Dual High- or Low-Side MOSFET Driver
Final Information
Typical Application
Figure 1: 3-Volt “Sleep-Mode” Switches
with Logic-Level MOSFETs
OFF
ON
MIC5016BN
IRLZ24
+3V to +4V
Gate A
Source B
Gnd
In A
V+ B
V+ A
Source A
Gate B
10µF
In B
Back
Light
IRLZ24
Logic
OFF
ON
General Description
MIC5016 and MIC5017 dual MOSFET drivers are designed
for gate control of N-channel, enhancement-mode, power
MOSFETs used as high-side or low-side switches. The
MIC5016/7 can sustain an on-state output indefinitely.
The MIC5016/7 operates from a 2.75V to 30V supply. In high-
side configurations, the driver can control MOSFETs that
switch loads of up to 30V. In low-side configurations, with
separate supplies, the maximum switched voltage is limited
only by the MOSFET.
The MIC5016/7 has two TTL compatible control inputs. The
MIC5016 is noninverting while the MIC5017 is inverting.
The MIC5016/7 features internal charge pumps that can
sustain gate voltages greater than the available supply
voltage. The driver is capable of turning on logic-level
MOSFETs from a 2.75V supply or standard MOSFETs from
a 5V supply. Gate-to-source output voltages are internally
limited to approximately 15V.
The MIC5016/7 is protected against automotive load dump,
reversed battery, and inductive load spikes of –20V. The
driver’s overvoltage shutdown feature turns off the external
MOSFETs at approximately 35V to protect the load against
power supply excursions.
The MIC5016 is an improved pin-for-pin compatible replace-
ment in many MIC5012 applications.
The MIC5016/7 is available in plastic 14-pin DIP and 16-pin
SOIC pacakges.
Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com
MIC5016/5017 Micrel
MIC5016/5017 2 October 1998
Block Diagram 1 of 2 Drivers per Package
Charge Pump
V+
*
Input
Ground
Source
Gate
15V
* Inverting version only
Connection Diagram
16-pin Wide SOIC14-pin DIP
2
3
4
5
6
7
1
13
12
11
10
9
8
14
NC
Source A
Gnd
Gate A
Source B
Gate B
NC
NC
NC
V+ B
In B
V+ A
NC
In A
N, J
2
3
4
5
6
7
8
1
15
14
13
12
11
10
9
16
NC
Source A
Gnd
Gate A
Source B
Gate B
NC
NC
NC
NC
NC
V+ B
In B
V+ A
NC
In A
WM
Pin Description
Pin Number Pin Number Pin Name Pin Function
N, J Package WM Package
12 14 V
+
A Supply Pin A. Must be decoupled to isolate large transients caused by power
MOSFET drain. 10µF is recommended close to pins 12 and/or 10 and
ground. V
+
A and V
+
B may be connected to separate supplies.
10 12 V
+
B Supply Pin B. See V
+
A.
14 16 Input A Turns on power MOSFET A when asserted. Requires approximately 1µA to
switch.
11 13 Input B Turns on power MOSFET B. See Input A.
4 4 Gate A Drives and clamps the gate of power MOSFET A
6 6 Gate B Drives and clamps the gate of power MOSFET B
2 2 Source A Connects the source lead of MOSFET A
5 5 Source B Connects the source lead of MOSFET B
3 3 Gnd Ground
MIC5016/5017 Micrel
October 1998 3 MIC5016/5017
Parameter Conditions Min Typ Max Units
Supply Current V
+
= 30V V
IN
De-Asserted (Note 5) 10 25 µA
(Each Driver Channel) V
IN
Asserted (Note 5) 5.0 10 mA
V
+
= 5V V
IN
De-Asserted 10 25
µA
V
IN
Asserted 60 100
V
+
= 3V V
IN
De-Asserted 10 25
µA
V
IN
Asserted 25 35
Logic Input Voltage Threshold 3.0V ≤ V
+
≤ 30V Digital Low Level 0.8
V
IN
T
A
= 25°C Digital High Level 2.0
V
Logic Input Current 3.0V ≤ V
+
≤ 30V V
IN
Low –2.0 0
µA
MIC5016 (non-inverting) V
IN
High 1.0 2.0
Logic Input Current 3.0V ≤ V
+
≤ 30V V
IN
Low –2.0 –1.0
µA
MIC5017 (inverting) V
IN
High –1.0 2.0
Input Capacitance 5.0 pF
Gate Enhancement 3.0V ≤ V
+
≤ 30V V
IN
Asserted 4.0 17 V
V
GATE
- V
SUPPLY
Zener Clamp 8.0V ≤ V
+
≤ 30V V
IN
Asserted 13 15 17 V
V
GATE
- V
SOURCE
Gate Turn-on Time, t
ON
V
+
= 4.5V V
IN
switched on, measure 2.5 8.0 ms
(Note 4) C
L
= 1000pF time for V
GATE
to reach V
+
+ 4V
V
+
= 12V As above, measure time for 90 140 µs
C
L
= 1000pF V
GATE
to reach V
+
+ 4V
Gate Turn-off Time, t
OFF
V
+
= 4.5V V
IN
switched off, measure 6.0 30 µs
(Note 4) C
L
= 1000pF time for V
GATE
to reach 1V
V
+
= 12V As above, measure time for 6.0 30 µs
C
L
= 1000pF V
GATE
to reach 1V
Overvoltage Shutdown 35 37 41 V
Threshold
Electrical Characteristics (Note 3) T
A
= –55°C to +125°C unless otherwise specified
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply
when operating the device beyond its specified Operating Ratings.
Note 2: The MIC5016/5017 is ESD sensitive.
Note 3: Minimum and maximum Electrical Characteristics are 100% tested at T
A
= 25°C and T
A
= 85°C, and 100% guaranteed over the
entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Note 4: Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information. Maximum value of switching time seen at 125°C, unit operated at room temperature will reflect the typical value
shown.
Note 5: “Asserted” refers to a logic high on the MIC5016 and a logic low on the MIC5017.
Absolute Maximum Ratings (Notes 1,2) Operating Ratings (Notes 1,2)
θ
JA
(Plastic DIP) .....................................................140°C/W
θ
JA
(SOIC) .............................................................110°C/W
Ambient Temperature: B version ................–40°C to +85°C
Ambient Temperature: A version ............. +55°C to +125°C
Storage Temperature ................................–65°C to +150°C
Lead Temperature......................................................260°C
(max soldering time: 10 seconds)
Supply Voltage (V
+
) ......................................... 2.75V to 30V
Supply Voltage ...............................................–20V to 60V
Input Voltage .....................................................–20V to V
+
Source Voltage..................................................–20V to V
+
Source Current..........................................................50mA
Gate Voltage ..................................................–20V to 50V
Junction Temperature .............................................. 150°C
P1-P3P4-P6P7-P9P10-P12

MIC5016BN

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IC DRIVER MOSF DUAL HI/LOW 14DIP
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