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IXFP8N85X

P1-P3P4-P6
© 2018 IXYS CORPORATION, All Rights Reserved
DS100804B(06/18)
X-Class HiPERFET
Power MOSFET
N-Channel Enhancement Mode
IXFA8N85XHV
IXFP8N85X
IXFQ8N85X
V
DSS
= 850V
I
D25
= 8A
R
DS(on)
850m
Features
International Standard Packages
High Voltage Package
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 850 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 3.0 5.5 V
I
GSS
V
GS
= 30V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 10 A
T
J
= 125C 750 A
R
DS(on)
V
GS
= 10V, I
D
= 4A, Note 1 850 m
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 850 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 850 V
V
GSS
Continuous 30 V
V
GSM
Transient 40 V
I
D25
T
C
= 25C8A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
16 A
I
A
T
C
= 25C4A
E
AS
T
C
= 25C 300 mJ
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 50 V/ns
P
D
T
C
= 25C 200 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
F
C
Mounting Force (TO-263HV) 10..65 / 2.2..14.6 N/lb
M
d
Mounting Torque (TO-220 & TO-3P) 1.13 / 10 Nm/lb.in
Weight TO-263HV 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
PreliminaryTechnical Information
G
S
TO-263HV (IXFA)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
G
D
S
D (Tab)
TO-3P (IXFQ)
TO-220 (IXFP)
D (Tab)
S
G
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 4A, Note 1 2.7 4.5 S
R
Gi
Gate Input Resistance 3
C
iss
654 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 714 pF
C
rss
11 pF
C
o(er)
40 pF
C
o(tr)
120 pF
Q
g(on)
17.0 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 4A 3.6 nC
Q
gd
10.0 nC
t
d(on)
15 ns
t
r
25 ns
t
d(off)
32 ns
t
f
23 ns
R
thJC
0.63 C/W
R
thCS
TO-220 0.50 C/W
TO-3P 0.21 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 4A
R
G
= 10 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 8 A
I
SM
Repetitive, pulse Width Limited by T
JM
32 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
125 ns
Q
RM
1.1 μC
I
RM
18.0 A
I
F
= 4A, -di/dt = 100A/μs
V
R
= 100V
© 2018 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
1
2
3
4
5
6
7
8
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
1
2
3
4
5
6
7
8
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 4A Value vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 8A
I
D
= 4A
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
Fig. 5. R
DS(on)
Normalized to I
D
= 4A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 2 4 6 8 1012141618
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
P1-P3P4-P6

IXFP8N85X

Mfr. #:
Buy IXFP8N85X
Manufacturer:
Littelfuse
Description:
MOSFET 850V/8A U-Junc X-Cla ss Power MOSFET
Lifecycle:
New from this manufacturer.
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