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PBSS4041PT,215

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NT.
1.2 Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
PBSS4041PT
60 V, 2.7 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 9 March 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - −60 V
I
C
collector current - - −2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--−8A
R
CEsat
collector-emitter
saturation resistance
I
C
= −3A;
I
B
= −300 mA
[1]
-80120mΩ
PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 March 2010 2 of 15
NXP Semiconductors
PBSS4041PT
60 V, 2.7 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
sym01
3
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4041PT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS4041PT *BL
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −60 V
V
CEO
collector-emitter voltage open base - −60 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −8A
I
B
base current - −1A
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS4041PT,215

Mfr. #:
Buy PBSS4041PT,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT BISS Transistor Load Switch
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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