IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R(th)
JC
- K/W
0.02
0.04
0.06
0.08
0.20
0.40
0.01
0.10
V
DS
- Volts
0 5 10 15 20 25
Capacitance - pF
100
1000
10000
V
SD
- Volts
0.4 0.6 0.8 1.0 1.2
I
D
- Amperes
0
20
40
60
80
100
T
J
=125
O
C
T
J
=25
O
C
Gate Charge - nC
0 50 100 150 200 250
V
GS
- Volts
0
2
4
6
8
10
12
14
F = 1MHz
Crss
Coss
Ciss
V
GS
= 0V
T
J
=25
O
C
Vds=300V
I
D
=16A
I
G
=10mA
F = 1MHz
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFH 30N50Q IXFH 32N50Q
IXFT 30N50Q IXFT 32N50Q
