IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 • I
D25
, Note 1 18 28 S
C
iss
3950 4925 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 640 800 pF
C
rss
210 260 pF
t
d(on)
35 45 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
42 50 ns
t
d(off)
R
G
= 2 Ω (External), 75 95 ns
t
f
20 25 ns
Q
g(on)
153 190 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
26 32 nC
Q
gd
85 105 nC
R
thJC
0.35 K/W
R
thCK
(TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 32 A
I
SM
Repetitive; pulse width limited by T
JM
128 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
250 ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V 0.75 µC
I
RM
7.5 A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFH 30N50Q IXFH 32N50Q
IXFT 30N50Q IXFT 32N50Q
