MSQ1PG, MSQ1PJ
www.vishay.com
Vishay General Semiconductor
Revision: 28-Sep-17
1
Document Number: 87547
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifier
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage
current
• ESD capability
• Meet MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MECHANICAL DATA
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
400 V, 600 V
I
FSM
15 A
V
F
at I
F
= 1.0 A 0.99 V
T
J
max. 175 °C
Package MicroSMP (DO-219AD)
Circuit configuration Single
MicroSMP (DO-219AD)
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL MSQ1PG MSQ1PJ UNIT
Device marking code QG QJ
Max. repetitive peak reverse voltage V
RRM
400 600 V
Max. average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
15 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Max. instantaneous forward voltage
I
F
= 0.5 A
T
A
= 25 °C
V
F
(1)
0.99 -
V
I
F
= 1.0 A 1.09 1.2
I
F
= 0.5 A
T
A
= 125 °C
0.88 -
I
F
= 1.0 A 0.99 1.05
Max. reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-1.0
μA
T
A
= 125 °C 6.0 50
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
650 - ns
Typical junction capacitance 4.0 V, 1 MHz C
J
4-pF
