USBQNM50412CE3/TR7 Datasheet USBQNM50415CE3/TR7, USBQNM50405CE3/TR7, USBQNM50403CE3/TR7 | P1-P3

USBQNM50403Ce3 – USBQNM50424Ce3

Available

500 W, Non-Magnetic Low Capacitance

Bidirectional TVS array

DESCRIPTION

This Transient Voltage Suppressor (TVS) is assembled in a non-magnetic QFN-143 package

with a leadframe 100% free of iron. It has the same pinout and footprint as the SOT-143

package and is aimed at applications in MRI machines and other magnetic environments

where the use of ferrous metals is not acceptable. The configuration gives protection to 1 bi-

directional data or interface line. It is designed for use in applications where low capacitance

protection is required at the board level from voltage transients caused by electrostatic

discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-

4-4 and the secondary effects of lightning. These TVS arrays have a peak power rating of 500

watts for an 8/20 μs pulse (figure 1). With a capacitance of only 3 pF, this part can provide

protection to very fast data lines including USB at 900 Mbits/sec.

QFN-143

Also available:

Unidirectional

(QFN-143)

USBQNM50403e3 –

USBQNM50424e3

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

• Protects 1 bidirectional line

• Surge protection per IEC 61000-4-2 and IEC 61000-4-4

• Ultra low capacitance

• Low profile surface mount package

• RoHS compliant versions are available

APPLICATIONS / BENEFITS

• EIA RS485 data rates: 5 Mbps

• 10 Base-T Ethernet

• USB data rate 900 Mbps

• Non-magnetic for MRI applications

MAXIMUM RATINGS @ 25 ºC unless otherwise noted

Parameters/Test Conditions

Symbol

Value

Unit

Storage Temperature

T

STG

-55 to +150

o

C

Junction Temperature

T

J

-55 to +125

o

C

Peak Pulse Power Dissipation with a 10/1000μs waveform

(with a duty factor of 0.01%)

P

PP

500

W

Solder Temperature @ 10 s

260

o

C

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

HALOGEN

FREE

USBQNM50403Ce3 – USBQNM50424Ce3

MECHANICAL and PACKAGING

• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.

• TERMINALS: RoHS compliant annealed matte-tin plating over EFTEC64T non-magnetic copper alloy. Readily solderable per

MIL-STD-750, method 2026.

• MARKING: Body marked with part number code (NxxC).

• POLARITY: Dot in corner indicates pin 1.

• TAPE-AND-REEL: Standard per EIA-481-B (add “TR” suffix to part number). Consult factory for quantities.

• WEIGHT: Approximately 16.53 milligrams

• See Package Dimensions

on last page.

PART NOMENCLATURE

USB Q NM 5 04 03 C e3

USB Suitable

QFN-143 Package

Non-Magnetic

500 W P

PP

Rating

RoHS Compliance

Bidirectional Designator

Rated Standoff Voltage (V

WM

)

(see Electrical Characteristics

table)

4 Pin Package

SYMBOLS & DEFINITIONS

Symbol

Definition

α

V(BR)

Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in

temperature that caused it expressed in %/°C or mV/°C.

I

(BR)

Breakdown Current: The current used for measuring breakdown voltage V

(BR)

.

I

D

Standby Current: The current through the device at rated stand-off voltage.

I

PP

Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse

current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an

external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.

V

(BR)

Breakdown Voltage: The voltage across the device at a specified current I

(BR)

in the breakdown region.

V

C

Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an

impulse current (I

PP

) for a specified waveform.

V

WM

Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that

may be continuously applied over the standard operating temperature.

ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated

PART

NUMBER

DEVICE

MARKING

STAND-

OFF

VOLTAGE

V

WM

Volts

BREAKDOWN

VOLTAGE

V

(BR)

@ 1 mA

Volts

CLAMPING

VOLTAGE

V

C

@ 1 Amp

(Figure 2)

Volts

CLAMPING

VOLTAGE

V

C

@ 5 Amp

(Figure 2)

Volts

STANDBY

CURRENT

I

D

@ V

WM

µA

CAPACITANCE

(f= 1 MHz)

C

@ 0 V

pF

TEMPERATURE

COEFFICIENT

OF V

(BR)

α

V(BR)

mV/°C

MAX MIN MAX MAX MAX MAX MAX

USBQNM50403Ce3

N03CE

3.3

4.0

8.0

11

200

3

-5

USBQNM50405Ce3

N05CE

5.0

6.0

10.8

12

40

3

1

USBQNM50412Ce3

N12CE

12.0

13.3

19.0

26

1

3

8

USBQNM50415Ce3

N15CE

15.0

16.7

24.0

32

1

3

11

USBQNM50424Ce3

N24CE

24.0

26.7

43.0

57

1

3

28

USBQNM50403Ce3 – USBQNM50424Ce3

GRAPHS

tp – Pulse Time – µs

FIGURE 1

Peak Pulse Power vs. Pulse Time

time – µs

FIGURE 2

Pulse Waveform

I

PP

Peak Pulse Current - % I

PP

P

PP

– Peak Pulse Power - kW

USBQNM50412CE3/TR7

USBQNM50412CE3/TR7

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