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DEIC421

P1-P3P4-P6P7-P8
DEIC421
RF MOSFET DRIVER
20 Ampere Ultrafast RF MOSFET Driver
With Kelvin Connection
Figure 1 - DEIC421 Functional Diagram
Applications
• Driving RF MOSFETs
• Class D or E Switching Amplifier Drivers
• Multi-MHz Switch Mode Power Supplies (SMPS)
• Pulse Generators
• Acoustic Transducer Drivers
• Pulsed Laser Diode Drivers
• Pulse Transformer Driver
Description
The DEIC421 is a CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class
D, E, and RF applications at up to 45MHz, as well as other applications requiring ultrafast rise and fall times or
short minimum pulse widths. The DEIC421 is an improved version of the DEIC420. The DEIC421 has a Kelvin
ground connection on the input side to allow the use of a common mode choke to avoid problems with ground
bounce. The internal layout of the package has been improved to reduce inductance. The DEIC421 can source
and sink 20A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse
widths of 8ns. The input of the driver is compatible with +5V or CMOS and is fully immune to latch up over the
entire operating range. Its features and wide safety margin in operating voltage and power make the DEIC421
unmatched in performance and value.
The DEIC421 is packaged in DEI’s new 7 leaded low inductance RF package. The DEIC421 is a surface-mount
device, and incorporates patented
(1)
RF layout techniques to minimize stray lead inductances for optimum
switching performance.
(1)
DEI U.S. Patent #4,891,686
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS™ processes
• Latch-Up Protected
• High Peak Output Current: 20A Peak
• Wide Operating Range: 8V to 30V
• Rise and Fall Times of <4ns
• Minimum Pulse Width of 8ns
• High Capacitive Load
Drive Capability: 4nF in <4ns
• Matched Rise and Fall Times
• 32ns Input to Output Delay Time
• Low Output Impedance
• Low Quiescent Supply Current
• Kelvin input ground connection
• Reduced internal inductance
IN GND
IN
DGND
OUT
VCC
DEIC421
RF MOSFET DRIVER
Absolute Maximum Ratings
Parameter Value
Supply Voltage 30V
Input Pin -5V to V
CC
+0.3V
All Other Pins -0.3V to V
CC
+0.3V
Power Dissipation
T
AMBIENT
≤ 25°C 2W
T
CASE
≤ 25°C 100W
Parameter Value
Storage Temperature 65°C to 150°C
Maximum Junction Temperature 150°C
Operating Temperature Range -40°C to 85°C
Thermal Impedance Rth
(JC)
(Junction to Case)
1.3°C/W
Soldering Lead Temperature
(10 seconds maximum)
300°C
Electrical Characteristics
Unless otherwise noted, T
A
= 25 °C, 8V ≤
V
CC
≤ 30V.
All voltage measurements with respect to DGND. DEIC421 configured as described in Test Conditions.
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage
3.5
V
V
IL
Low input voltage
0.8 V
V
IN
Input voltage range
-5
V
CC
+ 0.3 V
I
IN
Input current
0V ≤ V
IN
≤ V
CC
-10
10 mA
V
OH
High output voltage
V
CC
- .025
V
V
OL
Low output voltage
0.025 V
R
OH
Output resistance @
output high
I
OUT
=
10mA,
V
CC
=
15V
0.4 0.6
Ω
R
OL
Output resistance @
output low
I
OUT
=
10mA,
V
CC
=
15V
0.4 0.6
Ω
I
PEAK
Peak output current V
CC
=
15V
20
A
I
DC
Continuous output
current
4 A
f
MAX
Maximum frequency C
L
= 4nF,
V
CC
=
15V
45 MHz
t
R
Rise time
(1)
C
L
=
1nF,
V
CC
=
15V,
V
OH
=
2V
to
12V
C
L
=
4nF,
V
CC
=
15V,
V
OH
=
2V
to
12V
3
4
ns
ns
t
F
Fall time
(1)
C
L
=
1nF,
V
CC
=
15V,
V
OH
=
12V
to
2V
C
L
=
4nF,
V
CC
=
15V,
V
OH
=
12V
to
2V
3
3.5
ns
ns
t
ONDLY
On-time propagation
delay
(1)
C
L
=
4nF,
V
CC
=
15V
32 38 ns
t
OFFDLY
Off-time propagation
delay
(1)
C
L
=
4nF,
V
CC
=
15V
29 35 ns
P
Wmin
Minimum pulse width
FWHM,
C
L
=
1nF,
V
CC
=
15V
+3V
to
+3V,
C
L
=
1nF,
V
CC
=
15V
8
9
ns
ns
V
CC
Power supply voltage
8 15 30 V
I
CC
Power supply current
V
IN
=
3.5V
V
IN
=
0V
V
IN
=
+V
CC
1
0
3
10
10
mA
µA
µA
(1)
Refer to Figures 2 and 3
Specifications Subject To Change Without Notice
DEIC421
RF MOSFET DRIVER
Lead Description
SYMBOL FUNCTION DESCRIPTION
VCC Supply Voltage
Positive power-supply voltage input. These leads provide power to the entire
chip. The range for this voltage is 8V to 30V.
IN Input Input signal. TTL and CMOS compatible. 5V to 8V optimum.
IN GND Input Ground Input ground Kelvin connection.
OUT Output
Driver output. For application purposes, this lead is connected directly to the
gate of a MOSFET.
GND Power Ground
Power grounds should be connected to a low noise analog ground plane for
optimum performance.
Note: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do
not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 2 - Characteristics Test Diagram
Vcc
+
C
L
Choke
Vcc
Vcc
GND
GND
IN
IN GND
10uF
OUT
Figure 3 - Timing Diagram
INPUT
OUTPUT
5V
90%
2.5V
10%
0V
0V
Vcc
90%
10%
t
ONDLY
t
OFFDLY
t
R
t
F
PW
MIN
P1-P3P4-P6P7-P8

DEIC421

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RF MOSFET DRIVER 20 AMP
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