DMP6185SE
Document Number DS36465 Rev. 4 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage
V
DSS
-60 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current (Note 6) V
GS
= -10V
T
A
= +25°C
I
D
-3
A
T
A
= +70°C
-2.4
Maximum Body Diode Continuous Current
I
S
-2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-15
A
Single Pulsed Avalanche Current (Note 7)
I
AS
-16
A
Single Pulsed Avalanche Energy (Note 7)
E
AS
13
mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
104
°C/W
t<10s 51
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.2
W
T
A
= +70°C
1.4
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
60
°C/W
t<10s 30
Thermal Resistance, Junction to Case (Note 6)
R
JC
7.6
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-60
−
−
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
− −
-1 µA
V
DS
= -48V, V
GS
= 0V
Gate-Source Leakage
I
GSS
− −
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
th
-1
−
-3 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
−
110 150
m
V
GS
= -10V, I
D
= -2.2A
130 185
V
GS
= -4.5V, I
D
= -1.8A
Diode Forward Voltage
V
SD
−
-0.75 -0.95 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
−
708
−
pF
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
−
39
−
pF
Reverse Transfer Capacitance
C
rss
−
32
−
pF
Gate Resistance
R
−
17
28
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Q
−
6.2
−
nC
V
DS
= -30V, I
D
= -12A
Total Gate Charge (V
GS
= -10V) Q
−
14
−
nC
Gate-Source Charge
Q
s
−
2.8
−
nC
Gate-Drain Charge
Q
d
−
3.1
−
nC
Turn-On Delay Time
t
D
on
−
5.2
−
ns
V
DS
= -30V, R
L
= 2.5
V
GS
= -10V, R
G
= 3
Turn-On Rise Time
t
−
23
−
ns
Turn-Off Delay Time
t
D
off
−
33
−
ns
Turn-Off Fall Time
t
f
−
39
−
ns
Body Diode Reverse Recovery Time
t
r
−
22
−
ns
I
F
= -12A, di/dt = 100A/s
Body Diode Reverse Recovery Charge
Q
r
−
17
−
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T
A
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
