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APTM10DAM05TG

P1-P3P4-P6P7-P7
APTM10DAM05TG
APTM10DAM05TG– Rev 2 October, 2012
www.microsemi.com
1-7
CR1
VBUS
NT C2
0/VBUS
VBUS SENSE
G2
S2
NT C1
Q2
OUT
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 278
I
D
Continuous Drain Current
T
c
= 80°C 207
I
DM
Pulsed Drain current 1100
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 5
m
P
D
Maximum Power Dissipation T
c
= 25°C 780 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 100V
R
DSon
= 4.5m typ @ Tj = 25°C
I
D
= 278A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS V
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
MOSFET Power Module
APTM10DAM05TG
APTM10DAM05TG– Rev 2 October, 2012
www.microsemi.com
2-7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
GS
= 0V,V
DS
= 100V
T
j
= 25°C 200
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 80V
T
j
= 125°C
1000
µA
R
DS(on)
Drain – Source on Resistance V
GS
= 10V, I
D
= 125A
4.5 5
m
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 5mA 2 4 V
I
GSS
Gate – Source Leakage Current V
GS
= ±30 V, V
DS
= 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance 20
C
oss
Output Capacitance 8
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
2.9
nF
Q
g
Total gate Charge 700
Q
gs
Gate – Source Charge 120
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 50V
I
D
= 250A
360
nC
T
d(on)
Turn-on Delay Time 80
T
r
Rise Time 165
T
d(off)
Turn-off Delay Time 280
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 66V
I
D
= 250A
R
G
= 2.5
135
ns
E
on
Turn-on Switching Energy 1.1
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 250A,
R
G
=2.5Ω
1.2
mJ
E
on
Turn-on Switching Energy 1.22
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 250A, R
G
= 2.5Ω
1.28
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
200 V
T
j
= 25°C 350
I
RM
Maximum Reverse Leakage Current V
R
=200V
T
j
= 125°C 600
µA
I
F
DC Forward Current
Tc = 80°C 200 A
I
F
= 200A 1
I
F
= 400A 1.4
V
F
Diode Forward Voltage
I
F
= 200A T
j
= 125°C 0.9
V
T
j
= 25°C 60
t
rr
Reverse Recovery Time
T
j
= 125°C 110
ns
T
j
= 25°C 400
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 133V
di/dt =400A/µs
T
j
= 125°C 1680
nC
APTM10DAM05TG
APTM10DAM05TG– Rev 2 October, 2012
www.microsemi.com
3-7
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor
0.16
R
thJC
Junction to Case Thermal Resistance
Diode
0.29 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
k
B
25/85
T
25
= 298.15 K 3952
K
TT
B
R
R
T
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
P1-P3P4-P6P7-P7

APTM10DAM05TG

Mfr. #:
Buy APTM10DAM05TG
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
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