NVMFS5C645NLWFT1G

NVMFS5C645NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
6050403020100
0
400
800
1200
1600
2000
2400
2824201612840
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.8 1.00.70.60.50.40.3
0
5
15
20
25
35
40
Figure 11. Safe Operating Area Figure 12. I
PEAK
vs. Time in Avalanche
V
DS
(V) TIME IN AVALANCHE (s)
1001010.1
1
10
100
1000
0.1
1
100
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
DS
(A)
I
PEAK
(A)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
ISS
C
OSS
C
RSS
32
V
DS
, DRAINTOSOURCE VOLTAGE (V)
0
10
15
20
25
30
5
V
DS
= 30 V
T
J
= 25°C
I
D
= 25 A
Q
T
Q
GS
Q
GD
V
GS
= 4.5 V
V
DD
= 30 V
I
D
= 25 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 125°C
T
J
= 25°C
T
J
= 55°C
10
30
45
1E04 1E02
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01 ms
0.1 ms
1 ms
10 ms
T
C
= 25°C
V
GS
10 V
T
J(initial)
= 100°C
T
J(initial)
= 25°C
1E03
10
NVMFS5C645NL
www.onsemi.com
5
Figure 13. Thermal Characteristics
PULSE TIME (sec)
0.010.001 10.0001 0.10.00001 100.000001
0.01
0.1
1
10
100
R
q
JA
(t) (°C/W)
100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
NVMFS5C646NL 650 mm
2
, 2 oz., Cu Single Layer Pad
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVMFS5C645NLT1G 5C645L DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5C645NLWFT1G 645LWF DFN5
(PbFree, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C645NLT3G 5C645L DFN5
(PbFree)
5000 / Tape & Reel
NVMFS5C645NLWFT3G 645LWF DFN5
(PbFree, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C645NLAFT1G 5C645L DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5C645NLWFAFT1G 645LWF DFN5
(PbFree, Wettable Flanks)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
M 3.00 3.40
q 0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
DATE 25 JUN 201
8
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
D1 4.70 4.90
D2 3.80 4.00
E 6.15
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
c
L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
1
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
2X
0.475
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
s
may not follow the Generic Marking.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON14036D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
DFN5 5x6, 1.27P (SO−8FL)
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com

NVMFS5C645NLWFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET T6 60V SO8FL
Lifecycle:
New from this manufacturer.
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