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IRF3205ZSTRRPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRF3205ZS/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.2
0.6
1.0
1.
4
1.8
2.2
V
SD
, S
ource-t
oDrain V
oltage (
V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
V
DS
, D
rain-
to-Sour
ce Volt
age (V)
0
1000
2000
3000
4000
5000
6000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1
10
100
1000
V
DS
, D
rain-
toS
ource Vol
tage (V
)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°
C
Si
ngle Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
0
20
40
60
80
100
120
Q
G
Tot
al Gat
e Charge (nC
)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28
V
VDS= 11
V
I
D
= 66A
IRF3205ZS/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Temperat
ure (°
C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIM
ITED BY PACKAGE
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangular
Pulse D
urati
on (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
c
tor D = t1
/t2
2. P
eak Tj =
P dm x Z
thjc +
Tc
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion Tem
perature (
°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 66A
V
GS
= 10V
IRF3205ZS/LPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.
T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Tem
perature (
°C)
0
50
100
150
200
250
300
350
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 27A
47A
BOTTOM 66A
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperatur
e ( °C
)
1.0
2.0
3.0
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1K
VC
C
DUT
0
L
P1-P3
P4-P6
P7-P9
P10-P12
IRF3205ZSTRRPBF
Mfr. #:
Buy IRF3205ZSTRRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 75A D2PAK
Lifecycle:
New from this manufacturer.
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