© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1 Publication Order Number:
NTGS4111P/D
NTGS4111P, NVGS4111P
Power MOSFET
−30 V, −4.7 A, Single P−Channel, TSOP−6
Features
• Leading −30 V Trench Process for Low R
DS(on)
• Low Profile Package Suitable for Portable Applications
• Surface Mount TSOP−6 Package Saves Board Space
• Improved Efficiency for Battery Applications
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• Pb−Free Package is Available
Applications
• Battery Management and Switching
• Load Switching
• Battery Protection
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain Cur-
rent (Note 1)
Steady
State
T
A
= 25°C
I
D
−3.7
A
T
A
= 85°C −2.7
t ≤ 5 s T
A
= 25°C −4.7
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.25
W
t ≤ 5 s 2.0
Continuous Drain Cur-
rent (Note 2)
Steady
State
T
A
= 25°C
I
D
−2.6
A
T
A
= 85°C −1.9
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.63 W
Pulsed Drain Current
tp = 10 ms
I
DM
−15 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−1.7 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
100
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
62.5
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
200
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
3
4
1256
P−Channel
http://onsemi.com
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
XX M G
G
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
−30 V
68 mW @ −4.5 V
38 mW @ −10 V
R
DS(on)
TYP
−4.7 A
I
D
MAX
V
(BR)DSS
See detailed ordering and shipping information ion page 5 of
this data sheet.
ORDERING INFORMATION