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UMC5NT1G

P1-P3P4-P6P7-P9P10-P11
UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G,
NSVUMC5NT2G
http://onsemi.com
4
ORDERING INFORMATION
Device Package Shipping
†
UMC2NT1G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
NSVUMC2NT1G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
UMC3NT1G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
NSVUMC3NT1G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
UMC3NT2G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
UMC5NT1G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
UMC5NT2G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
NSVUMC5NT2G SC−88A/SOT−353
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DEVICE MARKING AND RESISTOR VALUES
Device Marking
Transistor 1 − PNP Transistor 2 − NPN
R1 (K) R2 (K) R1 (K) R2 (K)
UMC2NT1G, NSVUMC2NT1G
UMC3NT1G, NSVUMC3NT1G
UMC3NT2G
UMC5NT1G
UMC5NT2G, NSVUMC5NT2G
U2
U3
U3
U5
U5
22
10
10
4.7
4.7
22
10
10
10
10
22
10
10
47
47
22
10
10
47
47
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
q
JA
= 833C/W
UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G,
NSVUMC5NT2G
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G, NSVUMC2NT1G PNP TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 4. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0 10 20 30
V
O
= 0.2 V
T
A
=-25C
75C
100
10
1
0.1
40 50
Figure 5. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0 1 2 3 4
V
in
, INPUT VOLTAGE (V)
5 6 7 8 9 10
Figure 6. Input Voltage versus Output Current
0.01
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0 20 50
75C
25C
T
A
=-25C
50
010 2030 40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
25C
I
C
/I
B
= 10
25C
-25C
V
CE
= 10 V
T
A
=75C
f = 1 MHz
l
E
= 0 mA
T
A
= 25C
75C
25C
T
A
=-25C
V
O
= 5 V
UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G,
NSVUMC5NT2G
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G, NSVUMC2NT1G NPN TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN
Figure 7. V
CE(sat)
versus I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
=-25C
75C
25C
40
50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
1
0.1
0.01
0.001
020 40
50
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75C
25C
-25C
T
A
=-25C
25C
Figure 10. Output Current versus Input Voltage
75C
25C
T
A
=-25C
100
10
1
0.1
0.01
0.001
01 234
V
in
, INPUT VOLTAGE (V)
56 78 910
Figure 11. Input Voltage versus Output
Current
50
010203040
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
75C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 mA
T
A
= 25C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
P1-P3P4-P6P7-P9P10-P11

UMC5NT1G

Mfr. #:
Buy UMC5NT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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