DMN1150UFB-7B Datasheet DMN1150UFB-7B | P1-P3

DMN1150UFB

Document number: DS36101 Rev. 3 - 2

1 of 6

www.diodes.com

February 2013

DMN1150UFB

ADVANCE INFORMATION

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= +25°C

12V

0.15Ω @ V

= 4.5V

1.41A

0.185Ω @ V

= 2.5V

1.25A

0.21Ω @ V

= 1.8V

1.16A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power management functions

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage V

GS(TH)

, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN1150UFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X1-DFN1006-3

Top View

Internal Schematic

Bottom View

E5 = Product Type Marking Code

Bar Denotes Gate and Source Side

Top View

ESD PROTECTED

Equivalent Circuit

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

DMN1150UFB

Document number: DS36101 Rev. 3 - 2

2 of 6

www.diodes.com

February 2013

DMN1150UFB

ADVANCE INFORMATION

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

12 V

Gate-Source Voltage

GSS

±6 V

Continuous Drain Current (Note 5) V

= 4.5V

Steady

State

= +25°C

= +70°C

1.41

1.15

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

7 A

Maximum Body Diode continuous Current

1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

= +25°C

0.5

= +70°C

0.3

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

251 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

12 — — V

= 0V, I

= 250μA

Zero Gate Voltage Drain Current T

= +25°C I

DSS

— —

100 nA

= 12V, V

= 0V

Gate-Source Leakage

GSS

— —

±1 µA

= ±6V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

0.35

—

1.0 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)

—

150

mΩ

= 4.5V, I

= 1A

—

185

= 2.5V, I

= 1A

—

210

= 1.8V, I

= 1A

Diode Forward Voltage

— 0.7 1.2 V

= 0V, I

= 150mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

iss

— 106 —

=10V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

— 23 —

Reverse Transfer Capacitance

rss

— 21 —

Gate resistance

—

92.4

—

Ω

= 0V, V

= 0V, f = 1.0MHz

Total Gate Charge (V

= 4.5V) Q

— 1.5 —

= 4V, I

= 1A

Gate-Source Charge

— 0.2 —

Gate-Drain Charge

— 0.2 —

Turn-On Delay Time

(

)

— 4.1 —

= 4V,V

= 6V, I

= 1A

= 1Ω

Turn-On Rise Time

— 34.5 —

Turn-Off Delay Time

(

off

)

— 57 —

Turn-Off Fall Time

— 30 —

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

DMN1150UFB

Document number: DS36101 Rev. 3 - 2

3 of 6

www.diodes.com

February 2013

DMN1150UFB

ADVANCE INFORMATION

NEW PRODUCT

0.5

1.0

1.5

2.0

2.5

3.0

I, D

AIN

(A)

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

V= 1.5V

V= 1.0V

V= 1.8V

V= 2.0V

V= 2.5V

V= 3.0V

V= 3.5V

V= 4.0V

V= 4.5V

V= 6.0V

0.5

1.5

2.5

0 0.5 1.0 1.5 2.0

1.0

2.0

3.0

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

I, D

(A)

V = 5.0V

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0.05

0.15

0.25

01 2 3 45

0.10

0.20

0.30

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

V = 2.5V

V = 4.5V

V= 1.8V

0.05

0.15

0.25

0123456

0.10

0.20

0.30

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

, D

-S

ESIS

E ( )

DS(ON)

I = 1.0A

0.05

0.15

0 0.5 1.0 1.5 2.0 2.5 3.0

0.10

0.20

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

0.6

0.8

1.0

1.2

1.4

1.6

, D

-S

ON-RESISTANCE (NORMALIZED)

DS(ON)

1.8

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

V= V

I= 1.0A

6.0

V= V

I = 500mA

4.5

P1-P3 P4-P6

DMN1150UFB-7B

Mfr. #:

Buy DMN1150UFB-7B

Manufacturer:

Diodes Incorporated

Description:

MOSFET N-CH MOSFET 12V

Lifecycle:

New from this manufacturer.

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DMN1150UFB-7B