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BSC097N06NSATMA1

P1-P3P4-P6P7-P9P10-P10
BSC097N06NS
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 W
V
GS
=f(Q
gate
); I
D
=40 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
50
54
58
62
66
70
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
12 V
30 V
48 V
0
2
4
6
8
10
12
0 5 10 15
V
GS
[V]
Q
gate
[nC]
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
I
AV
[A]
t
AV
[µs]
Rev.2.0 page 7 2013-10-17
BSC097N06NS
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Rev.2.0 page 8 2013-10-17
BSC097N06NS
Package Footprint PG-TDSON-8
PG-TDSON-8: Footprint
Rev.2.0 page 9 2013-10-17
P1-P3P4-P6P7-P9P10-P10

BSC097N06NSATMA1

Mfr. #:
Buy BSC097N06NSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 46A TDSON-8
Lifecycle:
New from this manufacturer.
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