IXTH21N50 Datasheet IXTH24N50, IXTH21N50, IXTH21N50Q | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 500 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 500 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 21N50 21 A

24N50 24 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

21N50 84 A

24N50 96 A

P

D

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD (IXTH)

MegaMOS

TM

FET

N-Channel Enhancement Mode

TO-204 AE (IXTM)

V

DSS

I

D25

R

DS(on)

IXTH / IXTM 21N50 500 V 21 A 0.25

ΩΩ

Ω

IXTH / IXTM 24N50 500 V 24 A 0.23

ΩΩ

Ω

G = Gate, D = Drain,

S = Source, TAB = Drain

D

G

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 250 µA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA24V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J

= 25°C 200 µA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

21N50 0.25 Ω

24N50 0.23 Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Features

International standard packages

Low R

DS (on)

HDMOS

TM

process

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

Applications

Switch-mode and resonant-mode

power supplies

Motor controls

Uninterruptible Power Supplies (UPS)

DC choppers

Advantages

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

High power density

91536F(5/97)

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

IXTH 21N50 IXTH 24N50

IXTM 21N50 IXTM 24N50

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 10 V; I

D

= 0.5 • I

D25

, pulse test 11 21 S

C

iss

4200 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 450 pF

C

rss

135 pF

t

d(on)

24 30 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 I

D25

33 45 ns

t

d(off)

R

G

= 2 Ω, (External) 65 80 ns

t

f

30 40 ns

Q

g(on)

160 190 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 I

D25

28 40 nC

Q

gd

75 85 nC

R

thJC

0.42 K/W

R

thCK

0.25 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 21N50 21 A

24N50 24 A

I

SM

Repetitive; 21N50 84 A

pulse width limited by T

JM

24N50 96 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= I

S

, -di/dt = 100 A/µs, V

R

= 100 V 600 ns

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 AD (IXTH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 6.4 11.4 .250 .450

A1 1.53 3.42 .060 .135

∅b 1.45 1.60 .057 .063

∅D 22.22 .875

e 10.67 11.17 .420 .440

e1 5.21 5.71 .205 .225

L 11.18 12.19 .440 .480

∅p 3.84 4.19 .151 .165

∅p1 3.84 4.19 .151 .165

q 30.15 BSC 1.187 BSC

R 12.58 13.33 .495 .525

R1 3.33 4.77 .131 .188

s 16.64 17.14 .655 .675

TO-204 AE(IXTM) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Pins 1 - Gate 2 - Source

Case - Drain

1 2 3

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

BV/V

G(th)

- Normalized

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

V

GS(th)

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

10

20

30

21N50

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

R

DS(on)

- Normalized

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

I

D

- Amperes

0 5 10 15 20 25 30 35 40 45 50

R

DS(on)

- Normalized

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

V

GS

= 10V

V

GS

- Volts

012345678910

I

D

- Amperes

0

5

10

15

20

25

30

35

40

45

50

V

DS

- Volts

0 5 10 15 20 25 30 35

I

D

- Amperes

0

5

10

15

20

25

30

35

40

45

50

5V

7V

V

GS

= 10V

BV

CES

24N50

V

GS

= 15V

6V

I

D

= 12A

T

J

= 25°C

T

J

= 25°C

T

J

= 25°C

IXTH 21N50 IXTH 24N50

IXTM 21N50 IXTM 24N50

Fig. 1 Output Characteristics Fig. 2 Input Admittance

Fig. 3 R

DS(on)

vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage

IXTH21N50

IXTH21N50

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