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IXTH24N50

P1-P3P4-P4
4 - 4
© 2000 IXYS All rights reserved
V
DS
- Volts
110100
I
D
- Amperes
0.1
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
V
DS
- Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
C
rss
C
oss
V
DS
= 250V
I
D
= 12.5A
I
G
= 10mA
500
10µs
100µs
1ms
10ms
100ms
Limited by R
DS(on)
C
iss
T
J
= 25°C
T
J
= 125°C
f = 1 Mhz
V
DS
= 25V
IXTH 21N50 IXTH 24N50
IXTM 21N50 IXTM 24N50
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
P1-P3P4-P4

IXTH24N50

Mfr. #:
Buy IXTH24N50
Manufacturer:
Littelfuse
Description:
MOSFET 24 Amps 500V 0.23 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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