2SD2098T100R Datasheet 2SD2118TLQ, 2SD2098T100R, 2SD2098T100S | P1-P3

2SD2098 / 2SD2118 / 2SD2097

Transistors

Low V

CE(sat)

transistor (strobe flash)

2SD2098 / 2SD2118 / 2SD2097

!

!!

!Features

1) Low V

CE(sat)

.

V

CE(sat)

= 0.25V (Typ.)

(I

C

/I

B

= 4A / 0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SB1386 / 2SB1412 / 2SB1326.

!

!!

!

Structure

Epitaxial planar type

NPN silicon transistor

!

!!

!External dimensions (Units : mm)

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

2SD2098

2SD2118

2SD2097

Abbreviated symbol : AH∗

−0.1

+0.2

−0.1

+0.2

+0.3

−0.1

2.3±0.22.3±0.2

0.65

±0.1

0.9

0.75

1.0

±0.2

0.55

±0.1

9.5±0.5

5.5

1.5±0.3

2.5

1.5

2.3

0.5

±0.1

6.5

±0.2

5.1

C0.5

(3)

(2)

(1)

0.9

−0.1

+0.2

−0.05

+0.1

−0.1

+0.2

−0.1

(3)(2)(1)

4.0±0.3

1.0±0.2

0.5±0.1

2.5

3.0±0.2

1.5±0.1

0.4±0.1

0.5±0.1

0.4±0.1

0.4

1.5

4.5

1.6±0.1

1.0

6.8±0.2

2.5±0.2

1.05

0.45±0.1

2.54

0.5±0.1

0.9

4.4±0.2

14.5±0.5

(1)

(2)

(3)

0.65Max.

∗ Denotes h

FE

2SD2098 / 2SD2118 / 2SD2097

Transistors

!

!!

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage V

CBO

50 V

Collector-emitter voltage V

CEO

20 V

Emitter-base voltage V

EBO

6V

Collector current

I

C

5 A(DC)

I

CP

10

∗1

A(Pulse)

Junction temperature Tj 150

°C

Storage temperature Tstg −55~+150

°C

Collector power

dissipation

P

C

0.5

2SD2098

2SD2118

2SD2097

2

∗2

1

10

W(Tc=25°C)

1

∗3

W

∗1 Single pulse Pw=10ms

∗2 When mounted on a 40×40×0.7 mm ceramic board.

∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm

2

or larger.

!

!!

!Electrical characteristics (Ta=25°C)

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

Min.

50

20

6

−

120

−

0.25

150

30

−

0.5

390

1.0

−

VI

C

=50µA

I

C

=1mA

I

E

=50µA

V

CB

=40V

V

EB

=5V

V

CE

=2V, I

C

=0.5A

V

CE

=6V, I

E

=−50mA, f=100MHz

I

C

/I

B

=4A/0.1A

V

CE

=20V, I

E

=0A, f=1MHz

V

µA

−

V

∗

MHz

pF

Typ. Max. Unit Conditions

∗ Measured using pulse current.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

Transition frequency

!

!!

!Packaging specifications and h

FE

Package Taping

Code

2SD2098

Type

T100

1000h

FE

TL

2500

TV2

2500

2SD2118

2SD2097

QR

Basic ordering unit (pieces)

−

h

FE

values are classified as follows :

Item

h

FE

R

180~390

Q

120~270

2SD2098 / 2SD2118 / 2SD2097

Transistors

!

!!

!Electrical characteristic curves

1m

2m

5m

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

COLLECTOR CURRENT : I

C

(A)

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.1 Grounded emitter propagation

characteristics

V

CE

=2V

25°C

−25°C

Ta=100°C

0

1

2

3

4

5

0 0.4 0.8 1.2 1.6 2.0

Ta=25°C

5mA

10mA

15mA

20mA

25mA

30mA

35mA

40mA

I

B

=0mA

45mA

50mA

COLLECTOR CURRENT : I

C

(A)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics

1m

5

10

20

50

100

200

500

1000

2000

5000

2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

Ta=25°C

2V

1V

V

CE

=5V

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

Fig.3 DC current gain vs.

collector current ( Ι )

1m

5

10

20

50

100

200

500

1000

2000

5000

2m 5m0.010.020.050.10.2 0.5 1 2 5 10

V

CE

=1V

25°C

−25°C

Ta=100°C

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

Fig.4 DC current gain vs.

collector current ( ΙΙ )

1m

5

10

20

50

100

200

500

1000

2000

5000

2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

V

CE

=2V

25°C

−25°C

Ta=100°C

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

Fig.5 DC current gain vs.

collector current ( ΙΙΙ )

5m 0.01 0.02 0.05 0.2 0.5 12m

2

1

0.5

0.2

0.1

0.05

0.02

0.01

2510

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

Fig.6 Collector-emitter

saturation voltage vs.

collector current ( Ι )

Ta=25°C

0.1

I

C

/I

B

=50

30

10

40

2

1

0.5

0.2

0.1

0.05

0.02

0.01

2m 5m 0.01 0.02 0.0 5 0.1 0.2 0.5 1 2 5 10

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

Fig.7 Collector-emitter

saturation voltage vs.

collector current ( ΙΙ )

l

C

/l

B

=10

25°C

−25°C

Ta=100°C

2

1

0.5

0.2

0.1

0.05

0.02

0.01

2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR SATURATION VOLTAGE : V

CE(sat) (V)

COLLECTOR CURRENT : I

C

(A)

Fig.8 Collector-emitter

saturation voltage vs.

collector current ( ΙΙΙ )

l

C

/l

B

=30

Ta=100°C

25°C

−25°C

2

1

0.5

0.2

0.1

0.05

0.02

0.01

2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1 0

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

Fig.9 Collector-emitter

saturation voltage vs.

collector current (IV)

l

C

/l

B

=40

25°C

−25°C

Ta=100°C

2SD2098T100R

2SD2098T100R

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