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DMG1013UW-7

P1-P3P4-P6
DMG1013UW
Document number: DS31861 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG1013UW-7 SOT-323 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED
E
q
uivalent Circuit To
p
View
Top View
Source
Gate
Protection
Diode
Gate
Drai
n
GS
D
PA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
PA1
YM
Chengdu A/T Site
Shanghai A/T Site
e3
DMG1013UW
Document number: DS31861 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±6 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
-0.82
-0.54
A
Pulsed Drain Current (Note 6)
I
DM
-6 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
0.31 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
398 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - -100 nA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±2.0 μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.5 - -1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
0.5
0.7
1.0
0.75
1.05
1.5
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
- 0.9 - S
V
DS
= -10V, I
D
= -250mA
Diode Forward Voltage
V
SD
-0.8 -1.2 V
V
GS
= 0V, I
S
= -150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 59.76 -
pF
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 12.07 -
pF
Reverse Transfer Capacitance
C
rss
- 6.36 -
pF
Total Gate Charge
Q
g
- 622.4 -
pC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge
Q
g
s
- 100.3 -
pC
Gate-Drain Charge
Q
g
d
- 132.2 -
pC
Turn-On Delay Time
t
D
(
on
)
-
5.1
- ns
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= -200mA
Turn-On Rise Time
t
-
8.1
- ns
Turn-Off Delay Time
t
D
(
off
)
-
28.4
- ns
Turn-Off Fall Time
t
f
-
20.7
- ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG1013UW
Document number: DS31861 Rev. 3 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
0
0.3
0.6
0.9
1.2
1.5
01 2 345
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -8.0V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
2
4
6
8
10
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.3 0.6 0.9 1.2 1.5
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.3 0.6 0.9 1.2 1.5
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
P1-P3P4-P6

DMG1013UW-7

Mfr. #:
Buy DMG1013UW-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-Ch -20V VDSS Enchanced Mosfet
Lifecycle:
New from this manufacturer.
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