MT16KTF25664AZ-1G4G1

Table 12: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
576 536 496 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
696 656 616 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
528 448 368 mA
Precharge quiet standby current I
DD2Q
2
528 448 368 mA
Precharge standby current I
DD2N
2
560 480 400 mA
Precharge standby ODT current I
DD2NT
2
416 376 336 mA
Active power-down current I
DD3P
2
752 672 592 mA
Active standby current I
DD3N
2
832 752 672 mA
Burst read operating current I
DD4R
1
1216 1096 976 mA
Burst write operating current I
DD4W
1
1096 976 856 mA
Refresh current I
DD5B
2
1616 1576 1536 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
240 240 240 mA
All banks interleaved read current I
DD7
1
1856 1736 1616 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB (x64, DR) 240-Pin 1.35V DDR3L UDIMM
I
DD
Specifications
PDF: 09005aef8413b620
ktf16c256_512x64az.pdf – Rev. E 5/11 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Serial Presence-Detect EEPROM
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 13: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
DDSPD
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Input low voltage: Logic 0; All inputs V
IL
–0.6 V
DDSPD
+ 0.3 V
Input high voltage: Logic 1; All inputs V
IH
V
DDSPD
+ 0.7 V
DDSPD
+ 1.0 V
Output low voltage: I
OUT
= 3mA V
OL
0.4 V
Input leakage current: V
IN
= GND to V
DD
I
LI
0.1 2.0 µA
Output leakage current: V
OUT
= GND to V
DD
I
LO
0.05 2.0 µA
Table 14: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
Clock frequency
t
SCL 10 400 kHz
Clock pulse width high time
t
HIGH 0.6
µs
Clock pulse width low time
t
LOW 1.3
µs
SDA rise time
t
R
300 µs 1
SDA fall time
t
F 20 300 ns 1
Data-in setup time
t
SU:DAT 100
ns
Data-in hold time
t
HD:DI 0
µs
Data-out hold time
t
HD:DAT 200 900 ns
Data out access time from SCL low
t
AA:DAT 0.2 0.9 µs 2
Start condition setup time
t
SU:STA 0.6
µs 3
Start condition hold time
t
HD:STA 0.6
µs
Stop condition setup time
t
SU:STO 0.6
µs
Time the bus must be free before a new transition can start
t
BUF 1.3
µs
WRITE time
t
W
10 ms
Notes:
1. Guaranteed by design and characterization, not necessarily tested.
2. To avoid spurious start and stop conditions, a minimum delay is placed between the fall-
ing edge of SCL and the falling or rising edge of SDA.
3. For a restart condition, or following a WRITE cycle.
2GB, 4GB (x64, DR) 240-Pin 1.35V DDR3L UDIMM
Serial Presence-Detect EEPROM
PDF: 09005aef8413b620
ktf16c256_512x64az.pdf – Rev. E 5/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 240-Pin DDR3 UDIMM
30.50 (1.20)
29.85 (1.175)
PIN 1
17.3 (0.68)
TYP
2.50 (0.098) D
(2X)
2.30 (0.091) TYP
5.0 (0.197) TYP
123.0 (4.84)
TYP
1.0 (0.039)
TYP
0.80 (0.031)
TYP
0.75 (0.03) R
(8X)
0.76 (0.030) R
PIN 120
FRONT VIEW
133.50 (5.256)
133.20 (5.244)
47.0 (1.85)
TYP
71.0 (2.79)
TYP
9.5 (0.374)
TYP
BACK VIEW
PIN 240
PIN 121
1.37 (0.054)
1.17 (0.046)
4.0 (0.157)
MAX
2.20 (0.087) TYP
1.45 (0.057) TYP
3.05 (0.12) TYP
54.68 (2.15)
TYP
3.0 (0.118) 4X TYP
23.3 (0.92)
TYP
0.50 (0.02) R
(4X)
0.9 (0.035) TYP
1.0 (0.039) R (8X)
15.0 (0.59)
TYP
(4X)
3.1 (0.122) 2X TYP
5.1 (0.2) TYP
45°, 4X
U1
U2
U3
U4
U9
U5 U6 U7
U8
U10 U11 U12
U13
U14
U15
U16
U17
Notes:
1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for
additional design dimensions.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
2GB, 4GB (x64, DR) 240-Pin 1.35V DDR3L UDIMM
Module Dimensions
PDF: 09005aef8413b620
ktf16c256_512x64az.pdf – Rev. E 5/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

MT16KTF25664AZ-1G4G1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 2GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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