Preliminary IPD60N10S4-12
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1)
Thermal resistance, junction - case
R
thJC
- - - 1.6 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
- - - 62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
- - 40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
=1mA
100 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=46µA
2.0 2.7 3.5
Zero gate voltage drain current
I
DSS
V
DS
=100V, V
GS
=0V
- 0.01 1 µA
V
DS
=100V, V
GS
=0V,
T
j
=125°C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V, I
D
=60A
- 10.4 12.2
mW
Values
page 2 2014-06-30