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MMBF170LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10
1 Publication Order Number:
MMBF170LT1/D
MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, N−Channel SOT−23
Features
• NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
60 Vdc
Drain−Gate Voltage V
DGS
60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 ms)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current − Continuous
− Pulsed
I
D
I
DM
0.5
0.8
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1.) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
3
1
2
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM
& PIN ASSIGNMENT
500 mA, 60 V
R
DS(on)
= 5 W
3
Drain
2 SourceGate 1
www.onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
6Z MG
G
6Z = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MMBF170L, NVBF170L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (V
GS
= 0, I
D
= 100 mA)
V
(BR)DSS
60 − Vdc
Gate−Body Leakage Current, Forward (V
GSF
= 15 Vdc, V
DS
= 0) I
GSS
− 10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0 mA) V
GS(th)
0.8 3.0 Vdc
Static Drain−Source On−Resistance (V
GS
= 10 Vdc, I
D
= 200 mA) r
DS(on)
− 5.0
W
On−State Drain Current (V
DS
= 25 Vdc, V
GS
= 0) I
D(off)
− 0.5
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0 V, f = 1.0 MHz)
C
iss
− 60 pF
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
(V
DD
= 25 Vdc, I
D
= 500 mA, R
gen
= 50 W)
Figure 1
t
d(on)
− 10
ns
Turn−Off Delay Time t
d(off)
− 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
†
MMBF170LT1G SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
MMBF170LT3G SOT−23 (TO−236)
(Pb−Free)
10000 / Tape & Reel
NVBF170LT1G* SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
20 dB 50 W
ATTENUATOR
PULSE
GENERATOR
50 W
50 W 1 MW
V
out
125 W
+25 V
40 pF
V
in
TO SAMPLING
SCOPE
50 W INPUT
PULSE WIDTH
50%
90%
50%
10%
10%
90%
90%
V
in
OUTPUT
INVERTED
INPUT
(V
in
AMPLITUDE 10 VOLTS)
V
out
t
off
t
f
t
d(off)
t
on
t
d(on)
t
r
MMBF170L, NVBF170L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
7543210
0
0.2
0.4
0.6
0.8
4321
0
0.4
0.8
1.0
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
1.0
1.2
T
J
= 25°C
V
GS
= 10 V
4.2 V
5.0 V
4.5 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 150°C
T
J
= −55°C
0.2
0.6
Figure 5. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
0.850.550.450.350.250.15
0
1
2
3
4
5
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.65 0.75
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
Figure 6. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
10.50
0
2.5
5
12.5
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1.5
10
7.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
30
25
15
10
5
0
I
D
= 0.5 A
T
J
= 25°C
QT
V
DS
V
GS
Q
gd
Q
gs
Figure 7. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.90.80.70.60.50.4
0
0.04
0.20
I
S
, SOURCE CURRENT (A)
0.08
0.12
0.16
0.24
V
GS
= 0 V
T
J
= 25°C
6
7
8
2
20
0.02
0.06
0.22
0.10
0.14
0.18
1.00.30.20.1
8765
6
P1-P3P4-P5

MMBF170LT1G

Mfr. #:
Buy MMBF170LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 500mA N-Channel
Lifecycle:
New from this manufacturer.
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