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VTS40100CT-E3/45

P1-P3P4-P5
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Document Number: 88926
Revision: 02-Aug-07
www.vishay.com
1
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.375 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 seconds (for TO-220AB,
ITO-220AB & TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB & TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV
) 2 x 20 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.61 V
T
j
max. 150 °C
TMBS
®
TO-220AB
1
2
3
1
K
2
3
1
2
3
ITO-220AB
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
VTS40100CT VF40100C
VI40100CVB40100C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VTS40100CT VF40100C VB40100C VI40100C UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
I
F(AV)
40
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
250 A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
www.vishay.com Document Number: 88926
Revision: 02-Aug-07
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
(1)
at I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
T
A
= 25 °C
V
F
0.463
0.535
0.664
-
-
0.73
V
at I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
T
A
= 125 °C
0.375
0.445
0.605
-
-
0.67
Reverse current at rated V
R
per diode
(2)
at V
R
= 70 V
T
A
= 25 °C
T
A
= 125 °C
I
R
13.7
8.4
-
-
µA
mA
at V
R
= 100 V
T
A
= 25 °C
T
A
= 125 °C
69.6
22.5
1000
45
µA
mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VTS40100CT VF40100C VB40100C VI40100C UNIT
Typical thermal resistance per diode R
θJC
2.0 4.0 2.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VTS40100CT-E3/45 1.85 45 50/tube Tube
ITO-220AB VF40100C-E3/45 1.80 45 50/tube Tube
TO-263AB VB40100C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB40100C-E3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI40100C-E3/4W 1.46 4W 50/tube Tube
Figure 1. Forward Current Derating Curve
Case Temperature (°C)
Average Forward Current (A)
50
40
30
20
10
0
0 25 50 75 100 125 150 175
VF40100C
VI40100C
VB40100C
VTS40100CT
Figure 2. Forward Power Loss Characteristics Per Diode
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Document Number: 88926
Revision: 02-Aug-07
www.vishay.com
3
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Reverse Characteristics Per Diode
300
250
200
150
100
50
0
0 10 100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.8 1
100
10
1
0.1
T
A
= 100 °C
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
Figure 6. Typical Junction Capacitance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
110
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
10000
1000
100
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

VTS40100CT-E3/45

Mfr. #:
Buy VTS40100CT-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 625-V40100C-E3
Lifecycle:
New from this manufacturer.
Delivery:
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