WeEn Semiconductors
ACTT4S-800E
AC Thyristor Triac power switch
ACTT4S-800E All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 11 October 2016 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 108 °C; Fig. 1;
Fig. 2; Fig. 3
- 4 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 35 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 39 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse - 6 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 20 mA - 100 A/µs
I
GM
peak gate current t = 20 μs - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
j
junction temperature - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state; Fig. 6 - 2 kV
T
mb
(°C)
-50 1501000 50
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2
3
1
4
5
I
T(RMS)
(A)
0
108 °C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
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0
2
4
6
8
10
12
10
1 10
surge duration (s)
I
T(RMS)
(A)
f = 50 Hz; T
mb
= 108 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
