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SZESD7371XV2T1G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1 Publication Order Number:
ESD7371/D
ESD7371,
SZESD7371 Series
Ultra-Low Capacitance ESD
Protection
The ESD7371 Series is designed to protect voltage sensitive
components that require ultra−low capacitance from ESD and
transient voltage events. Excellent clamping capability, low
capacitance, high breakdown voltage, high linearity, low leakage, and
fast response time make these parts ideal for ESD protection on
designs where board space is at a premium. It has industry leading
capacitance linearity over voltage making it ideal for RF applications.
This capacitance linearity combined with the extremely small package
and low insertion loss makes this part well suited for use in antenna
line applications for wireless handsets and terminals.
Features
• Industry Leading Capacitance Linearity Over Voltage
• Low Capacitance (0.7 pF Max, I/O to GND)
• Stand−off Voltage: 5.3 V
• Low Leakage: < 1 nA
• Low Dynamic Resistance < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
• USB 2.0, USB 3.0
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
IEC 61000−4−2 (ESD) (Note 1) 20 kV
IEC 61000−4−5 (ESD) (Note 2) 3.0 A
Total Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
300
400
mW
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−2 waveform.
2. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
3. Mounted with recommended minimum pad size, DC board FR−4
See Application Note AND8308/D for further description of survivability specs.
MARKING
DIAGRAMS
PIN CONFIGURATION
AND SCHEMATIC
http://onsemi.com
X, XX = Specific Device Code
M = Date Code
1
Cathode
2
Anode
SOD−323
CASE 477
SOD−523
CASE 502
SOD−923
CASE 514AB
1
2
AG
M
1
2
AG
12
M
AE M
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
ESD7371, SZESD7371 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
5.3 V
Breakdown Voltage (Note 4) V
BR
I
T
= 1 mA 7.0 V
Reverse Leakage Current I
R
V
RWM
= 5.3 V < 1.0 50 nA
Clamping Voltage (Note 5) V
C
I
PP
= 1 A 11 15 V
Clamping Voltage (Note 5) V
C
I
PP
= 3 A 14 20 V
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f < 1 GHz
0.43
0.39
0.7
0.7
pF
Dynamic Resistance R
DYN
TLP Pulse 0.45
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
ESD7371, SZESD7371 Series
http://onsemi.com
3
Figure 1. IV Characteristics Figure 2. CV Characteristics
I (A)
V (V)
CAPACITANCE (pF)
V
bias
(V)
Figure 3. RF Insertion Loss Figure 4. Capacitance over Frequency
CAPACITANCE (pF)
FREQUENCY
dB
FREQUENCY (Hz)
1E8 1E9 1E10
2
Figure 5. Positive TLP I−V Curve
TLP CURRENT (A)
VOLTAGE (V)
Figure 6. Negative TLP I−V Curve
EQUIVALENT V
IEC
(kV)
VOLTAGE (V)
1.E−12
1.E−11
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
0123456789101112
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0123456
0
−2
−4
−6
−8
−10
−12
−14
2E10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5
0
2
4
6
8
0
2
4
6
8
10
12
14
16
0 2 4 6 8 101214161820
TLP CURRENT (A)
EQUIVALENT V
IEC
(kV)
0
2
4
6
8−16
−14
−12
−10
−8
−6
−4
−2
0
02468101214161820
EQUIVALENT V
IEC
(kV)
EQUIVALENT V
IEC
(kV)
P1-P3P4-P6P7-P8

SZESD7371XV2T1G

Mfr. #:
Buy SZESD7371XV2T1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors LOW CAP ESD IN SOD-523
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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