1N4148 A0G

1N4148 / 1N4448 / 1N914B

Taiwan Semiconductor

1

Version:J1804

500mW, High Speed Switching Diode

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

MECHANICAL DATA

● Case: DO-35

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Polarity: Indicated by cathode band

● Weight: 125 ± 4 mg

KEY PARAMETERS

PARAMETER VALUE UNIT

I

F

150 mA

V

RRM

100 V

I

FSM

2 A

V

F

at I

F

=100mA 1 V

T

J MAX

150 °C

Package DO-35

Configuration Singal die

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

1N4148

1N4448

1N914B

UNIT

Power dissipation

P

D

500 mW

Repetitive peak reverse voltage

V

RRM

100 V

Non-Repetitive peak forward surge current

Pluse width = 1μs, Square wave

I

FSM

2 A

Non-Repetitive peak forward current

I

FM

450 mA

Forward current I

F

150 mA

Junction temperature range T

J

-65 to +150 °C

Storage temperature range T

STG

-65 to +150 °C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-ambient thermal resistance R

ӨJA

240 °C/W

1N4148 / 1N4448 / 1N914B

Taiwan Semiconductor

2

Version:J1804

ELECTRICAL SPECIFICATIONS

(T

A

= 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL MIN MAX UNIT

Forward voltage

per diode

(1)

1N4448,1N914B

I

F

= 5 mA,

T

J

= 25°C

V

F

0.62 0.72

V 1N4148

I

F

= 10 mA,

T

J

= 25°C

- 1.00

1N4448,1N914B

I

F

= 100 mA,

T

J

= 25°C

- 1.00

Reverse voltage

(2)

I

R

= 100 μA, T

J

= 25°C

V

R

100 -

V

I

R

= 5 μA, T

J

= 25°C

75 -

Reverse current

(2)

V

R

= 20 V, T

J

= 25°C

I

R

- 25

nA

V

R

= 75 V, T

J

= 25°C

- 5

μA

Junction

capacitance

1 MHz, V

R

=0V C

J

- 4

pF

Reverse

recovery time

I

F

= 10mA , V

R

=6V, R

L

= 100Ω ,

I

RR

= 1mA

t

rr

- 4

ns

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

ORDERING INFORMATION

PART NO.

PACKAGE PACKING

1N4148 R0G DO-35 10K / 14" Reel

1N4148 R0 DO-35

10K / 14" Reel

1N4148 A0G DO-35 5K / Box(Ammo)

1N4148 A0 DO-35

5K / Box(Ammo)

1N4448 R0G DO-35 10K / 14" Reel

1N4448 R0 DO-35

10K / 14" Reel

1N4448 A0G DO-35 5K / Box(Ammo)

1N4448 A0 DO-35

5K / Box(Ammo)

1N914B R0G DO-35 10K / 14" Reel

1N914B R0 DO-35

10K / 14" Reel

1N914B A0G DO-35 5K / Box(Ammo)

1N914B A0 DO-35

5K / Box(Ammo)

1N4148 / 1N4448 / 1N914B

Taiwan Semiconductor

3

Version:J1804

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Fig.1 Typical Forward Characteristics

Fig. 2

Reverse Current VS. Reverse Voltage

Fig.3 Admissible Power Dissipation Curve

Fig.4

Typical Junction Capacitance

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

T

A

=25°C

1

10

100

1000

10000

0 20 40 60 80 100 120

100°C

70°C

50°C

T

A

=25°C

0

100

200

300

400

500

0 25 50 75 100 125 150 175 200

0

0.3

0.6

0.9

1.2

1.5

0 5 10 15 20 25 30

f=1.0 MHz

Reverse Current :l

R

(nA)

Forward Voltage (V)

Ambient Temperature (

o

C)

Reverse Voltage : VR (V)

Forward Current (A)

Power Dissipation (mW)

Reverse Voltage (V)

Junction Capacitance (pF)

1N4148 A0G

Mfr. #:

Manufacturer:

Taiwan Semiconductor

Description:

Diodes - General Purpose, Power, Switching GENERAL PURPOSE SMALL SIGNAL DIODE

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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