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NTD18N06

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1 Publication Order Number:
NTD18N06/D
NTD18N06
Power MOSFET
18 Amps, 60 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
"20
"30
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
18
10
54
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
55
0.36
2.1
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 12 A, V
DS
= 60 Vdc)
E
AS
72 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
2.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recom-
mended Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
N−Channel
D
S
G
60 V
51 mW
R
DS(on)
TYP
18 A
I
D
MAX
V
(BR)DSS
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
18N06 = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK−3
CASE 369D
STYLE 2
1
2
3
4
YWW
18
N06G
http://onsemi.com
YWW
18
N06G
NTD18N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
70.8
68.8
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
−
3.1
7.0
4.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 9.0 Adc)
R
DS(on)
− 51 60
mW
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 18 Adc)
(V
GS
= 10 Vdc, I
D
= 9.0 Adc, T
J
= 150°C)
V
DS(on)
−
−
0.91
0.85
1.3
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 9.0 Adc) g
FS
− 10.1 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 509 710 pF
Output Capacitance
C
oss
− 162 230
Transfer Capacitance C
rss
− 47 100
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 18 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
− 12 25 ns
Rise Time t
r
− 23 50
Turn−Off Delay Time t
d(off)
− 19 40
Fall Time t
f
− 20 40
Gate Charge
(V
DS
= 48 Vdc, I
D
= 18 Adc,
V
GS
= 10 Vdc) (Note 3)
Q
T
− 15.3 30 nC
Q
1
− 3.2 −
Q
2
− 7.3 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 18 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 18 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
0.98
0.87
1.15
−
Vdc
Reverse Recovery Time
(I
S
= 18 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 42 −
ns
t
a
− 31 −
t
b
− 11 −
Reverse Recovery Stored Charge Q
RR
− 0.066 −
mC
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD18N06
http://onsemi.com
3
1.8
1.6
1.2
1.4
1
0.8
0.6
10
1
100
1000
04
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.1
0.08
0.06
2010
0.04
0.02
0
30
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
40
−50 50250−25 75 125100
3 3.8 7
040503020 6010
3
10
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
150 175
V
GS
= 0 V
I
D
= 9 A
V
GS
= 10 V
30
0.12
0.1
0.08
0.06
0.04
0
0.12
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
40
T
J
= 150°C
T
J
= 100°C
20
0
40
10
30
4.6 5.4
0.02
02010 30 40
6.2
2
9 V
8 V
7 V
6.5 V
5.5 V
6 V
5 V
7.8
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 15 V
P1-P3P4-P6P7-P9

NTD18N06

Mfr. #:
Buy NTD18N06
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 18A N-Channel
Lifecycle:
New from this manufacturer.
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