4
Absolute Maximum Ratings (T
A
= 25°C)
AlInGaP
Parameters GaP AlGaAs Red, Amber Yellow Green GaN/InGaN
DC Forward Current
[1]
30 mA 30 mA 30 mA
[3,4]
20 mA
[4]
20 mA
Peak Forward Current
[2]
100 mA 100 mA 100 mA 100 mA 100 mA
Power Dissipation 78 mW 78 mW 72 mW 48 mW 120 mW
Reverse Voltage 5 V
Junction Temperature 110°C
Operating Temperature –55°C to +100°C
Storage Temperature –55°C to +100°C
Notes:
1. Derate linearly as shown in  gure 4.
2. Duty factor = 10%, Frequency = 1kHz.
3. Drive Current between 10 mA and 30 mA are recommended for best long term performance.
4. Operation at current below 5 mA is not recommended.
Part Numbering System
HSM x
1
– A x
2
x
3
x
4
– x
5
x
6
x
7
x
8
x
9
Packaging Option
Color Bin Selection
Intensity Bin Select
Device Speci cation Con guration
Package Type
LED Chip Color
5
Optical Characteristics (T
A
= 25°C)
Peak Dominant Luminous Luminous Intensity/
Wavelength Wavelength Viewing Angle E cacy
v
Total Flux
PEAK
(nm)
D
(nm)
[1]
2
1/2
(Degrees)
[2]
(lm/W)
[3]
I
v
(mcd) /
v
(mlm)
Color Typ. Typ. Typ. Typ. Typ.
GaP Red 635 626 120 120 0.45
AlGaAs Red 645 637 120 63 0.45
AlInGaP Red 635 626 120 150 0.45
AlInGaP Red Orange 621 615 120 240 0.45
GaP Orange 600 602 120 380 0.45
AlInGaP Amber 592 590 120 480 0.45
GaP Yellow 583 585 120 580 0.45
AlInGaP Amber 592 590 120 480 0.45
GaP Yellow Green 565 569 120 590 0.45
GaP Emerald Green 558 560 120 650 0.45
InGaN Green 523 525 120 500 0.45
InGaN Blue 468 470 120 75 0.45
GaN Blue 428 462 120 65 0.45
AlInGaP Yellow Green 575 571 120 620 0.45
Notes:
1. The dominant wavelength,
D
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2.
1/2
is the o -axis angle where the luminous intensity is 1/2 the peak intensity.
3. Radiant intensity, I
e
in watts/steradian, may be calculated from the equation I
e
= I
v
/
v
, where I
v
is the luminous intensity in candelas and
v
is
the luminous e cacy in lumens/watt.
Electrical Characteristics (T
A
= 25°C)
Forward Voltage Reverse Voltage Reverse Voltage
V
F
(Volts) @ I
F
= 20mA V
R
@ 100 A V
R
@ 10 A
Dice Technology Typ. Max. Min. Min.
GaP 2.2 2.6 5 -
AS AlGaAs 1.9 2.6 5 -
AlInGaP 1.9 2.4 5 -
GaN Blue 3.9 4.3 - 5
InGaN 3.4 4.05 - 5
6
Figure 1. Relative intensity vs. wavelength
Figure 2. Forward current vs. forward voltage Figure 3. Relative intensity vs. forward voltage Figure 4a. Maximum forward current vs. ambient
temperature. Derated based on T
J
MAX = 110°C,
R
JA
= 500°C/W (1 chip on)
03
FORWARD VOLTAGE – V
0
10
30
35
FORWARD CURRENT – mA
5
5
20
15
25
12 4
AS AlInGaP
InGaN
AlGaAs
GaP
GaN
BLUE
020
DC FORWARD CURRENT – mA
0
0.4
1.8
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
35
0.8
0.2
1.0
10
0.6
1.2
25
AlInGaP
Gap
515 30
1.4
1.6
AlGaAs
GaN
InGaN
0
35
0
20 60 80 120
CURRENT – mA
TEMPERATURE – °C
40
20
25
15
AlGaAs
10
30
100
GaP
5
AS AlInGaP
InGaN/GaN
WAVELENGTH – nm
RELATIVE INTENSITY
1.0
0.8
0
380 480 580 680 730 780
630530430
BLUE
CYAN
0.6
0.4
0.2
GREEN
YELLOW GREEN
AMBER
ORANGE
RED ORANGE
RED
0.1
0.3
0.5
0.7
0.9
WAVELENGTH – nm
RELATIVE INTENSITY
1.0
0.8
0
380 480 580 680 730 780
630530430
GaN BLUE
GaP
EMERALD
GREEN
GaP ORANGE
GaP RED
0.6
0.4
0.2
GaP YELLOW
GaP
YELLOW
GREEN

HSMF-A204-A00J1

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
Standard LEDs - SMD Org/YGrn Bi-Color
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union