IXFK260N17T

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IXFK260N17T
IXFX260N17T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
25
50
75
100
125
150
175
200
225
250
275
300
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 85V
I
D
= 130A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK260N17T
IXFX260N17T
IXYS REF:F_260N17T(9E)3-26-09
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.010
0.100
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W

IXFK260N17T

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 170V 260A TO-264
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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