BB181_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 16 February 2009 2 of 6
NXP Semiconductors
BB181
VHF variable capacitance diode
4. Marking
5. Limiting values
6. Characteristics
Table 3. Marking codes
Type number Marking code
BB181 N
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current - 20 mA
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Table 5. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current see Figure 2
V
R
=30V - - 10 nA
V
R
=30V; T
j
=85°C - - 200 nA
r
s
diode series resistance f = 470 MHz at C
d
=9pF - - 3 Ω
C
d
diode capacitance f = 1 MHz; see Figure 1 and
Figure 3
V
R
= 0.5 V 8 - 17 pF
V
R
= 28 V 0.7 - 1.055 pF
C
d(0V5)
/C
d(28V)
diode capacitance ratio (0.5 V to 28 V) f = 1 MHz 12 - 16