NCP5220A
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4
PIN DESCRIPTION
Pin Symbol Description
1 COMP VDDQ error amplifier compensation node.
2 FBDDQ DDQ regulator feedback pin.
3 SS Soft−start pin of DDQ and MCH.
4 PGND Power ground.
5 VTT VTT regulator output.
6 VDDQ Power input for VTT linear regulator.
7 AGND Analog ground connection and remote ground sense.
8 FBVTT VTT regulator pin for closed loop regulation.
9 SLP_S5 Active LOW control signal to activate S5 Power OFF State.
10 FB1P5 V1P5 switching regulator feedback pin.
11 GND_1P5 Power ground for V1P5 regulator.
12 BG_1P5 Gate driver output for V1P5 regulator low side N−Channel Power FET.
13 TG_1P5 Gate driver output for V1P5 regulator high side N−Channel Power FET.
14 SLP_S3 Active LOW control signal to activate S3 sleep state.
15 COMP_1P5 V1P5 error amplifier compensation node.
16 5VDUAL 5.0 V dual supply input, which is monitored by undervoltage lock out circuitry.
17 BOOT Gate driver input supply, which is monitored by undervoltage lock out circuitry, and a boost capacitor connection
between SWDDQ and this pin.
18 TG_DDQ Gate driver output for DDQ regulator high side N−Channel Power FET.
19 BG_DDQ Gate driver output for DDQ regulator low side N−Channel Power FET.
20 SW_DDQ DDQ regulator switch node and current limit sense input.
21 TH_PAD Copper pad on bottom of IC used for heatsinking. This pin should be connected to the ground plane under the IC.
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage (Pin 16) to AGND (Pin 7) 5VDUAL −0.3, 6.0 V
BOOT (Pin 17) to AGND (Pin 7) BOOT −0.3, 14 V
Gate Drive (Pins 12, 13, 18, 19) to AGND (Pin 7) Vg −0.3 DC,
−4.0 for t100 ns; 14
V
Input / Output Pins to AGND (Pin 7)
Pins 1−3, 5, 6, 8−10, 14−15, 20
V
IO
−0.3, 6.0 V
PGND (Pin 4), GND_1P5 (Pin 11) to AGND (Pin 7) V
GND
−0.3, 0.3 V
Thermal Characteristics
DFN−20 Plastic Package
Thermal Resistance, Junction−to−Air
R
q
JA
35 °C/W
Operating Junction Temperature Range T
J
0 to +150 °C
Operating Ambient Temperature Range T
A
0 to +70 °C
Storage Temperature Range T
stg
−55 to +150 °C
Moisture Sensitivity Level MSL 2.0
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) "2.0 kV per JEDEC standard:
JESD22–A114. Machine Model (MM) "200 V per JEDEC standard: JESD22–A115.
2. Latchup Current Maximum Rating: "150 mA per JEDEC standard: JESD78.
NCP5220A
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ELECTRICAL CHARACTERISTICS (5VDUAL = 5.0 V, BOOT = 12 V, T
A
= 0°C to 70°C, L = 1.7 mH, COUT1 = 3770 mF,
COUT2 = 470 mF, COUT3 = NA, CSS = 33 nF, R1 = 2.166 kW, R2 = 2.0 kW, RZ1 = 20 kW, RZ2 = 8.0 W, CP1 = 10 nF,
CZ1 = 6.8 nF, CZ2 = 100 nF, RM1 = 2.166 kW, RM2 = 2.0 kW, RZM1 = 20 kW, RZM2 = 8.0 W, CPM1 = 10 nF, CZM1 = 6.8 nF,
CZM2 = 100 nf for min/max values unless otherwise noted). Duplicate component values of MCH regulator from DDQ.
Characteristic Symbol Test Conditions Min Typ Max Unit
SUPPLY VOLTAGE
5VDUAL Supplier Rail Voltage V5VDUAL 4.5 5.0 5.5 V
BOOT Supplier Rail Voltage at S0 VBOOT 10.5 12 13.2 V
SUPPLY CURRENT
S0 Mode Supply Current from 5VDUAL I5VDL_S0 SLP_S5 = HIGH, SLP_S3 = HIGH,
BOOT = 12 V, TG_1P5 and BG_1P5
Open
10 mA
S3 Mode Supply Current from 5VDUAL I5VDL_S3 SLP_S5 = HIGH, SLP_S3 = LOW,
TG_1P5 and BG_1P5 Open
5.0 mA
S5 Mode Supply Current from 5VDUAL I5VDL_S5 SLP_S5 = LOW, BOOT = 0 V,
TG_1P5 and BG_1P5 Open
1.0 mA
S0 Mode Supply Current from BOOT IBOOT_S0 SLP_S5 = HIGH, SLP_S3 = HIGH,
BOOT = 12 V, TG_1P5 and BG_1P5
Open
25 mA
S3 Mode Supply Current from BOOT IBOOT_S3 SLP_S5 = HIGH, SLP_S3 = LOW,
TG_1P5 and BG_1P5 Open
25 mA
UNDERVOLTAGE−MONITOR
5VDUAL UVLO Upper Threshold V5VDLUV+ 4.4 V
5VDUAL UVLO Hysteresis V5VDLhys 250 400 550 mV
BOOT UVLO Upper Threshold VBOOTUV+ 8.8 10.4 V
BOOT UVLO Hysteresis VBOOThys 1.0 1.3 V
THERMAL SHUTDOWN
Thermal Shutdown Tsd (Note 3) 145 °C
Thermal Shutdown Hysteresis Tsdhys (Note 3) 25 °C
DDQ SWITCHING REGULATOR
FBDDQ Feedback Voltage, Control Loop in
Regulation
VFBQ T
A
= 25°C
T
A
= 0°C to 70°C
1.178
1.166
1.190
1.202
1.214
V
Feedback Input Current IDDQFB V(FBDDQ) = 1.3 V 1.0
mA
Oscillator Frequency in S0 Mode FDDQS0 217 250 283 KHz
Oscillator Frequency in S3 Mode FDDQS3 434 500 566 KHz
Oscillator Ramp Amplitude dVOSC (Note 3) 1.3 Vp−p
Current Limit Blanking Time in S0 Mode TDDQbk (Note 3) 400 nS
Current Limit Threshold Offset from 5VDUAL VOCP (Note 3) 0.8 V
Minimum Duty Cycle Dmin 0 %
Maximum Duty Cycle Dmax 100 %
Soft−Start Pin Current for DDQ Iss1 V(SS) = 0 V 3.0 4.0
mA
DDQ ERROR AMPLIFIER
DC Gain GAINDDQ (Note 3) 70 dB
Gain−Bandwidth Product GBWDDQ COMP PIN to GND = 220 nF,
1.0 W in Series (Note 3)
12 MHz
Slew Rate SRDDQ COMP PIN TO GND = 10 pF 8.0 V/uS
3. Guaranteed by design, not tested in production.
NCP5220A
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6
ELECTRICAL CHARACTERISTICS (5VDUAL = 5.0 V, BOOT = 12 V, T
A
= 0°C to 70°C, L = 1.7 mH, COUT1 = 3770 mF,
COUT2 = 470 mF, COUT3 = NA, CSS = 33 nF, R1 = 2.166 kW, R2 = 2.0 kW, RZ1 = 20 kW, RZ2 = 8.0 W, CP1 = 10 nF,
CZ1 = 6.8 nF, CZ2 = 100 nF, RM1 = 2.166 kW, RM2 = 2.0 kW, RZM1 = 20 kW, RZM2 = 8.0 W, CPM1 = 10 nF, CZM1 = 6.8 nF,
CZM2 = 100 nf for min/max values unless otherwise noted). Duplicate component values of MCH regulator from DDQ.
Characteristic UnitMaxTypMinTest ConditionsSymbol
VTT ACTIVE TERMINATION REGULATOR
VTT Tracking DDQ_REF/2 at S0 Mode DVTTS0 IOUT= 0 to 2.0 A (Sink Current)
IOUT= 0 to –2.0 A (Source Current)
−30 30 mV
VTT Source Current Limit ILIMVTsrc The current limit is valid only after
finishing soft−start
2.0 A
VTT Sink Current Limit ILIMVTsnk 2.0 A
CONTROL SECTION
SLP_S5, SLP_S3 Input Logic HIGH Logic_H 2.0 V
SLP_S5, SLP_S3 Input Logic LOW Logic_L 0.8 V
SLP_S5, SLP_S3 Input Current Ilogic 1.0
mA
GATE DRIVERS
TGDDQ Gate Pull−HIGH Resistance RH_TG VCC = 12 V, V(TGDDQ) = 11.9 V 3.0
W
TGDDQ Gate Pull−LOW Resistance RL_TG VCC = 12 V, V(TGDDQ) = 0.1 V 2.5
W
BGDDQ Gate Pull−HIGH Resistance RH_BG VCC = 12 V, V(BGDDQ) = 11.9 V 3.0
W
BGDDQ Gate Pull−LOW Resistance RL_BG VCC = 12 V, V(BGDDQ) = 0.1 V 1.3
W
TG1P5 Gate Pull−HIGH Resistance RH_TPG VCC = 12 V, V(TG1P5) = 11.9 V 3.0
W
TG1P5 Gate Pull−LOW Resistance RL_TPG VCC = 12 V, V(TG1P5) = 0.1 V 2.5
W
BG1P5 Gate Pull−HIGH Resistance RH_BPG VCC = 12 V, V(BG1P5) = 11.9 V 3.0
W
BG1P5 Gate Pull−LOW Resistance RL_BPG VCC = 12 V, V(BG1P5) = 0.1 V 1.3
W
MCH SWITCHING REGULATOR
VFB1P5 Feedback Voltage, Control Loo
in Regulation
VFB1P5 T
A
= 0°C to 70°C 0.784 0.8 0.816 V
Feedback Input Current I1P5FB 1.0
mA
Oscillator Frequency F1P5 217 250 283 KHz
Oscillator Ramp Amplitude dV1P5OSC (Note 4) 1.3 Vp−p
Minimum Duty Cycle Dmin_1P5 0 %
Maximum Duty Cycle Dmax_1P5 100 %
Soft−Start Pin Current for V1P5 Regulator ISS2 (Note 4) 3.0 4.0
mA
4. Guaranteed by design, not tested in production.

NCP5220AMNR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC REG CTRLR DDR 2OUT 20QFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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