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74HC2G34GV,125

P1-P3P4-P6P7-P9P10-P12P13-P15
74HC_HCT2G34_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 6 October 2006 6 of 14
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 µA; V
CC
= 2.0 V - - 0.1 V
I
O
= 20 µA; V
CC
= 4.5 V - - 0.1 V
I
O
= 20 µA; V
CC
= 6.0 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - - 0.4 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 6.0 V - - ±1.0 µA
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
- - 20.0 µA
Table 7. Static characteristics for 74HC2G34
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Static characteristics for 74HCT2G34
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 25 °C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 1.6 - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - 1.2 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= −20 µA; V
CC
= 4.5 V 4.4 4.5 - V
I
O
= −4.0 mA; V
CC
= 4.5 V 4.18 4.32 - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 µA; V
CC
= 4.5 V - 0 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - ±0.1 µA
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 1.0 µA
∆I
CC
additional supply current V
I
= V
CC
− 2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 300 µA
C
I
input capacitance - 1.5 - pF
T
amb
= −40 °C to +85 °C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= −20 µA; V
CC
= 4.5 V 4.4 - - V
I
O
= −4.0 mA; V
CC
= 4.5 V 4.13 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 µA; V
CC
= 4.5 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.33 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - ±1.0 µA
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 10.0 µA
∆I
CC
additional supply current V
I
= V
CC
− 2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 375 µA
74HC_HCT2G34_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 6 October 2006 7 of 14
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
11. Dynamic characteristics
T
amb
= −40 °C to +125 °C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= −20 µA; V
CC
= 4.5 V 4.4 - - V
I
O
= −4.0 mA; V
CC
= 4.5 V 3.7 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 µA; V
CC
= 4.5 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.4 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - ±1.0 µA
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 20.0 µA
∆I
CC
additional supply current V
I
= V
CC
− 2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 410 µA
Table 8. Static characteristics for 74HCT2G34
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
(85 °C)
Max
(125 °C)
74HC2G34
t
pd
propagation delay nA to nY; see Figure 5
[1]
V
CC
= 2.0 V; C
L
= 50 pF - 29 75 - 95 125 ns
V
CC
= 4.5 V; C
L
= 50 pF - 9 15 - 19 25 ns
V
CC
= 6.0 V; C
L
= 50 pF - 8 13 - 16 20 ns
t
t
transition time nY; see Figure 5
[2]
V
CC
= 2.0 V; C
L
= 50 pF - 18 75 - 95 125 ns
V
CC
= 4.5 V; C
L
= 50 pF - 6 15 - 19 25 ns
V
CC
= 6.0 V; C
L
= 50 pF - 5 13 - 16 20 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[3]
-10- - - -pF
74HC_HCT2G34_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 6 October 2006 8 of 14
NXP Semiconductors
74HC2G34; 74HCT2G34
Dual buffer gate
[1] t
pd
is the same as t
PLH
and t
PHL
[2] t
t
is the same as t
TLH
and t
THL
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
12. Waveforms
74HCT2G34
t
pd
propagation delay nA to nY; see Figure 5
[1]
V
CC
= 4.5 V; C
L
= 50 pF - 10 18 - 23 29 ns
t
t
transition time nY; see Figure 5
[2]
V
CC
= 4.5 V; C
L
= 50 pF - 6 15 - 19 25 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
− 1.5 V
[3]
-9- - - -pF
Table 9. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
(85 °C)
Max
(125 °C)
Measurement points are given in Table 10.
V
OL
and V
OH
are typical voltage output drop that occur with the output load.
Fig 5. The data input (nA) to output (nY) propagation delays and output transition times
001aaf302
V
I
nA input
t
PLH
V
M
90 % 90 %
10 % 10 %
V
M
t
PHL
t
TLH
t
THL
GND
V
OH
nY output
V
OL
Table 10. Measurement points
Type Input Output
V
M
V
I
t
r
= t
f
V
M
74HC2G34 0.5V
CC
GND to V
CC
6.0 ns 0.5V
CC
74HCT2G34 1.3 V GND to 3.0 V 6.0 ns 1.3 V
P1-P3P4-P6P7-P9P10-P12P13-P15

74HC2G34GV,125

Mfr. #:
Buy 74HC2G34GV,125
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers 5V DUAL BUFFER GATE
Lifecycle:
New from this manufacturer.
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