SGR2N60UF Rev. A1
SGR2N60UF
©2002 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Thermal Response, Zthjc [
℃
/W]
Rectangular Pulse Duration [sec]
1 10 100 1000
0.1
1
10
20
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0246810
0
3
6
9
12
15
300 V
200 V
V
CE
= 100 V
Common Emitter
R
L
= 250
Ω
Tc = 25
℃
Gate - Emitter Voltage, V
GE
[ V ]
Gate Charge, Q
g
[ nC ]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
0.3 1 10 100 1000
0.01
0.1
1
10
30
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1
㎳
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0.5 1.0 1.5 2.0 2.5
10
100
Eoff
Eon
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 200
Ω
T
C
= 25
℃
T
C
= 125
℃
Switching Loss [uJ]
Collector Current, I
C
[A]
