SGR2N60UFDTM Datasheet SGR2N60UFDTF, SGR2N60UFDTM | P1-P3

IGBT

SGR2N60UF

Ultra-Fast IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UF series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

Features

• High speed switching

• Low saturation voltage : V

CE(sat)

= 2.1 V @ I

C

= 1.2A

• High input impedance

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

Symbol Description SGR2N60UF Units

V

CES

Collector-Emitter Voltage 600 V

V

GES

Gate-Emitter Voltage ± 20 V

I

C

Collector Current @ T

C

= 25°C2.4 A

Collector Current @ T

C

= 100°C1.2 A

I

CM (1)

Pulsed Collector Current 10 A

P

D

Maximum Power Dissipation @ T

C

= 25°C25 W

Maximum Power Dissipation @ T

C

= 100°C10 W

T

J

Operating Junction Temperature -55 to +150 °C

T

stg

Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Typ. Max. Units

R

θJC

Thermal Resistance, Junction-to-Case -- 5.0 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 50 °C/W

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

C

E

G

C

E

D-PAK

G

E

C

SGR2N60UF Rev. A1

SGR2N60UF

Electrical Characteristics of the IGBT T

C

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

Collector-Emitter Breakdown Voltage V

GE

= 0V, I

C

= 250uA 600 -- -- V

∆B

VCES

/

∆T

J

Temperature Coefficient of Breakdown

Voltage

V

GE

= 0V, I

C

= 1mA -- 0.6 -- V/°C

I

CES

Collector Cut-Off Current V

CE

= V

CES

, V

GE

= 0V -- -- 250 uA

I

GES

G-E Leakage Current V

GE

= V

GES

, V

CE

= 0V -- -- ± 100 nA

On Characteristics

V

GE(th)

G-E Threshold Voltage I

C

= 1.2mA, V

CE

= V

GE

3.5 4.5 6.5 V

V

CE(sat)

Collector to Emitter

Saturation Voltage

I

C

= 1.2A

,

V

GE

= 15V

-- 2.1 2.6 V

I

C

= 2.4A

,

V

GE

= 15V

-- 2.6 -- V

Dynamic Characteristics

C

ies

Input Capacitance

V

CE

= 30V

,

V

GE

= 0V,

f = 1MHz

-- 98 -- pF

C

oes

Output Capacitance -- 18 -- pF

C

res

Reverse Transfer Capacitance -- 4 -- pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, I

C

= 1.2A,

R

G

= 200Ω, V

GE

= 15V,

Inductive Load, T

C

= 25°C

-- 15 -- ns

t

r

Rise Time -- 20 -- ns

t

d(off)

Turn-Off Delay Time -- 80 130 ns

t

f

Fall Time -- 95 160 ns

E

on

Turn-On Switching Loss -- 30 -- uJ

E

off

Turn-Off Switching Loss -- 13 -- uJ

E

ts

Total Switching Loss -- 43 70 uJ

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, I

C

= 1.2A,

R

G

= 200Ω, V

GE

= 15V,

Inductive Load, T

C

= 125°C

-- 19 -- ns

t

r

Rise Time -- 24 -- ns

t

d(off)

Turn-Off Delay Time -- 115 200 ns

t

f

Fall Time -- 176 250 ns

E

on

Turn-On Switching Loss -- 36 -- uJ

E

off

Turn-Off Switching Loss -- 27 -- uJ

E

ts

Total Switching Loss -- 63 100 uJ

Q

g

Total Gate Charge

V

CE

= 300 V, I

C

= 1.2A,

V

GE

= 15V

-- 9 14 nC

Q

ge

Gate-Emitter Charge -- 3 5 nC

Q

gc

Gate-Collector Charge -- 1.5 3 nC

L

e

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

SGR2N60UF Rev. A1

SGR2N60UF

048121620

0

4

8

12

16

20

Common Emitter

T

C

= 125

℃

2.4A

1.2A

I

C

= 0.6A

Collector - Emitter Voltage, V

CE

[V]

Gate - Emitter Voltage, V

GE

[V]

048121620

0

4

8

12

16

20

Common Emitter

T

C

= 25

℃

2.4A

1.2A

I

C

= 0.6A

Collector - Emitter Voltage, V

CE

[V]

Gate - Emitter Voltage, V

GE

[V]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.1 1 10 100 1000

Duty cycle : 50%

T

C

= 100

℃

Power Dissipation = 4W

V

CC

= 300V

Load Current : peak of square wave

Frequency [KHz]

Load Current [A]

0306090120150

0

1

2

3

4

2.4A

1.2A

I

C

= 0.6A

Common Emitter

V

GE

= 15V

Collector - Emitter Voltage, V

CE

[V]

Case Temperature, T

C

[

℃

]

0.5 1 10

0

1

2

3

4

5

6

Common Emitter

V

GE

= 15V

T

C

= 25

℃

T

C

= 125

℃

Collector Current, I

C

[A]

Collector - Emitter Voltage, V

CE

[V]

02468

0

2

4

6

8

10

12

20V

12V

15V

V

GE

= 10V

Common Emitter

T

C

= 25

℃

Collector Current, I

C

[A]

Collector - Emitter Voltage, V

CE

[V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

Characteristics

Fig 3. Saturation Voltage vs. Case

Temperature at Variant Current Level

Fig 4. Load Current vs. Frequency

Fig 5. Saturation Voltage vs. V

GE

Fig 6. Saturation Voltage vs. V

GE

SGR2N60UFDTM

SGR2N60UFDTM

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